60 nm Self-Aligned-Gate InGaAs HEMTs采用Mo金属 - 副本
2023年12月13日发(作者:摊的四字词语)-60 nm Self-Aligned-Gate InGaAs HEMTs with Record High-Frequency Characteristics Tae-Woo Kim, Dae-Hyun Kim and Jesús A. del Alamo Massachutts Institute of Technology (MIT),
时间:2023-12-13 热度:3℃