SP8M3

SP8M3

Transistors

Switching

SP8M3

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) small and Surface Mount Package (SOP8).

zApplication

Power switching, DC / DC converter.

zAbsolute maximum ratings (Ta=25°C)

ParameterSymbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

P

D

Tch

Tstg

Limits

NchannelPchannel

30

−30

20

−20

±5.0

±4.5

±20

±18

1.6

−1.6

20

−18

2

150

−55 to +150

zExternal dimensions (Unit : mm)

SOP8

5.0±0.2

(

5

)

(

8

)

6.

.

0

±

0

.

3

3

9

±

0

.

1

5

1

.

5

±

0

.

1

0

.

1

5

1.27

0.4±0.1

0.1

Each lead has same dimensions

M

a

x

.

1

.

7

5

0

.

5

±

0

.

1

(

1

)

(

4

)

0.2±0.1

zEquivalent circuit

Unit

V

V

A

A

A

A

W

°C

°C

(8)(7)

(6)(5)

(8)(7)(6)(5)

Drain-source voltage

Gate-source voltage

Drain current

Source current

(Body diode)

Total power dissipation

Channel temperature

Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 MOUNTED ON A CERAMIC BOARD.

Continuous

Puld

Continuous

Puld

∗1

∗1

∗2

∗2

SP8M3

Transistors

N-ch

zElectrical characteristics (Ta=25°C)

ParameterSymbol

Min.Typ.Max.Conditions

−−10µAV

30−−VI=1mA, V=0V

−−1IµAV=30V, V=0V

1.0−2.5VV=10V, I=1mA

−3651I

−5273mΩI=5.0A, V=4.5VR

−5882I

3.0−−SI=5.0A, V=10V

−230−Input capacitancepFV=10V

−80Output capacitance

−

−6t

−8Vt

−22Rt

−R=10Ω

−3.95.5nCV 15VQ

−1.1Q

−1.4−nCI=5.0AQ

50Rever transfer capacitanceC

5t

−pFV=0V

−pFf=1MHz

−ns

−ns

−ns

−ns

−nCV=5V

I

GSS

Gate-source leakage

Drain-source breakdown voltageV

(BR) DSSDGS

DSSDSGS

Zero gate voltage drain current

V

GS (th)DSD

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Turn-on delay time

Ri time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Puld

Unit

GSDS

=20V, V=0V

DGS

=5.0A, V=10V

DGSDS (on)

DGS

=5.0A, V=4V

DDSfs

DSiss

GS

I=2.5A, V 15V

DDD

GS

=10V

Ld (off)

=6.0Ω

Gf

DDg

GS

Dgd

∗

∗

∗

∗

Y

C

C

oss

rss

d (on)

r

gs

∗

∗

∗

∗

∗

∗

∗

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

ParameterSymbol

Forward voltage

∗Puld

V−−1.2VI=6.4A, V=0V

SDSGS

Min.Typ.Max.Conditions

Unit

∗

Rev.A 2/5

SP8M3

Transistors

P-ch

zElectrical characteristics (Ta=25°C)

ParameterSymbol

Min.Typ.Max.Conditions

−−10−µA

−−−30V

−−1I−µA

−−2.5−1.0VV

4056−

5780−mΩ

6590−

−−3.5S

850−−Input capacitancepFV= −10V

190−Output capacitanceV=0V

120Rever transfer capacitanceC

10t−

25t−V

60t−

25t

8.5Q−

2.5Q−

3.0−Q−nCI

−pF

−pF

−ns

−ns

−ns

−ns

−nC

−nC

I

GSS

Gate-source leakageV= −20V, V=0V

Drain-source breakdown voltageVI= −1mA, V=0V

(BR) DSS

DSS

Zero gate voltage drain currentV=−30V, V=0V

V

GS (th)

Gate threshold voltage= −10V, I= −1mA

Static drain-source on-state

R

DS (on)

resistance

Y

fs

Forward transfer admittance= −2.5A, V= −10V

C

issDS

C

oss

rss

−f=1MHz

Turn-on delay time

d (on)

Ri time

r

Turn-off delay time

d (off)

Fall time

f

−

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

∗Puld

Unit

GSDS

DGS

DSGS

DSD

I= −4.5A, V= −10V

DGS

I= −2.5A, V= −4.5V

DGS

I

DGS

= −2.5A, V= −4.0V

I

DDS

GS

I= −2.5A, V −15V

DDD

GS

= −10V

R=6.0Ω

L

R=10Ω

G

V −15V

DD

V= −5V

GS

D

= −4.5A

∗

∗

∗

∗

∗

∗

∗

∗

∗

∗

∗

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

ParameterSymbol

Forward voltage

∗Puld

V−−−1.2VI= −1.6A, V=0V

SDSGS

Min.Typ.Max.Conditions

Unit

∗

Rev.A 3/5

SP8M3

Transistors

N-ch

zElectrical characteristic curves

G

A

T

E

-

S

O

U

R

C

E

V

O

L

T

A

G

E

:

V

G

S

(

V

)

1000

Ta=25°C

f=1MHz

V

GS

=0V

10000

S

W

I

T

C

H

I

N

G

T

I

M

E

:

t

(

n

s

)

C

A

P

A

C

I

T

A

N

C

E

:

C

(

p

F

)

1000

t

f

Ta=25°C

V=15V

DD

V

GS

=10V

R=10Ω

G

Puld

10

Ta=25°C

9

V=15V

DD

I=5A

D

8

R=10Ω

G

7

Puld

6

5

4

3

2

1

0

012345678

C

iss

100

C

oss

C

rss

100

t

d (off)

10

t

r

t

d (on)

10

0.010.1110100

1

0.010.1110

DRAIN-SOURCE VOLTAGE : V

DS

(V)

DRAIN CURRENT : I

D

(A)

TOTAL GATE CHARGE : Qg(nC)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Fig.2 Switching Characteristics

Fig.3 Dynamic Input Characteristics

V=10V

DS

Puld

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

S

T

A

T

I

C

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

S

T

A

T

E

R

E

S

I

S

T

A

N

C

EI=5A

:

R

D

S

(

o

n

)

(

m

Ω

)

D

R

A

I

N

C

U

R

R

E

N

T

:

I

D

(

A

)

10

300

250

200

150

100

50

0

Ta=25°C

Puld

S

O

U

R

C

E

C

U

R

R

E

N

T

:

I

s

(

A

)

10

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

V=0V

GS

Puld

1

D

I=2.5A

D

1

0.1

0.1

0.01

0.001

0.00.51.01.52.02.53.03.54.0

0246810121416

0.01

0.00.51.01.5

GATE-SOURCE VOLTAGE : V(V)

GS

GATE-SOURCE VOLTAGE : V(V)

GS

SOURCE-DRAIN VOLTAGE : V

SD

(V)

Fig.4 Typical Transfer Characteristics

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Fig.6 Source Current vs.

Source-Drain Voltage

S

T

A

T

SP8M3

Transistors

P-ch

zElectrical characteristic curves

G

A

T

E

-

S

O

U

R

C

E

V

O

L

T

A

G

E

:

−

V

G

S

(

V

)

10000

Ta=25°C

f=1MHz

V=0V

GS

10000

S

W

I

T

C

H

I

N

G

T

I

M

E

:

t

(

n

s

)

C

A

P

A

C

I

T

A

N

C

E

:

C

(

p

F

)

1000

1000

C

iss

Ta=25°C

V= −15V

DD

V= −10V

GS

R

G

=10Ω

Puld

8

7

6

5

4

3

2

1

0

012345678910

Ta=25°C

V= −15V

DD

I

D

= −4.5A

R=10Ω

G

Puld

t

f

100

t

d (off)

100

C

oss

C

rss

10

t

d (on)

t

r

10

0.010.1110100

1

0.010.1110

DRAIN-SOURCE VOLTAGE : −V(V)

DS

DRAIN CURRENT : −I(A)

D

TOTAL GATE CHARGE : Qg(nC)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Fig.2 Switching Characteristics

Fig.3 Dynamic Input Characteristics

S

T

A

T

I

C

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

S

T

A

T

E

R

E

S

I

S

T

A

N

C

E

:

R

D

S

(

o

n

)

(

m

Ω

)

D

R

A

I

N

C

U

R

R

E

N

T

:

−

I

D

(

A

)

10

V= −10V

DS

Puld

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

200

Ta=25°C

Puld

I=−4.5A

D

I=−2.0A

D

S

O

U

R

C

E

C

U

R

R

E

N

T

:

−

I

S

(

A

)

10

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

V=0V

GS

Puld

1

150

1

0.1

100

0.1

0.01

50

0.001

0.00.51.01.52.02.53.03.54.0

0

0246810121416

0.01

0.00.51.01.5

GATE-SOURCE VOLTAGE : −V(V)

GS

GATE-SOURCE VOLTAGE : −V(V)

GS

SOURCE-DRAIN VOLTAGE : −V

SD

(V)

Fig.4 Typical Transfer Characteristics

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Fig.6 Source Current vs.

Source-Drain Voltage

SS

TT

AA

TT

II

CC

DD

RR

AA

II

NN

--

S

O

UU

RR

CC

EE

OO

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual u, therefore, plea request

that specifications to be parately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard