MITSUBISHI MGF2407A 说明书

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MITSUBISHI MGF2407A 说明书

< High-power GaAs FET (small signal gain stage) >

MGF2407A

S to Ku BAND / 0.28W

non - matched

DESCRIPTION

The MGF2407A, power GaAs FET with an N-channel schottky

gate, is designed for u in S to Ku band amplifiers.

FEATURES

 High output power

Po=24.5dBm(TYP.) @f=14.5GHz

 High linear power gain

GLP=8.0dB(TYP.) @f=14.5GHz

 High power added efficiency

P.A.E.=30%(TYP.) @f=14.5GHz,P1dB

APPLICATION

 S to Ku Band power amplifiers

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=75mA Refer to Bias Procedure

Absolute maximum ratings

(Ta=25C)

Symbol Parameter Ratings Unit VGDO

VGSO

ID

IGR

IGF

PT*1

Tch

Tstg

Gate to drain voltage

Gate to source voltage

Drain current

Rever gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-15 V

Mitsubishi Electric Corporation puts the maximum

-15 V

effort into making miconductor products better

200 mA

and more reliable , but there is always the

-0.6 mA

possibility that trouble may occur with them.

2.5 mA

Trouble with miconductors may lead to personal

1.5 W

injury , fire or property damage. Remember to give

due consideration to safety when making your

175 C

circuit designs , with appropriate measure such

-65 to +175C

as (I) placement of substitutive , auxiliary circuits ,

(ii) u of non-flammable material or (iii) prevention

against any malfunction or mishap.

Keep Safety first in your circuit designs!*1:Tc=25C

Electrical characteristics

(Ta=25C)

Symbol Parameter

IDSS

gm

Saturated drain current

Transconductance

Gate to source cut-off voltage

Output power

Linear power gain

Test conditions Limits Unit

VDS=3V,VGS=0V

VDS=3V,ID=0.5mA

VDS=3V,ID=75mA

VDS=10V,ID(RF off)=75mA

f=14.5GHz

ΔVf method

Min. Typ. Max.

200 mA

100 150

- mS

50 65

-1

7

-

-2.5

8

-

-4

-

100

V

dB

C/W

23 24.5 - dBm

- 30 - %

VGS(off)

P1dB

GLP

P.A.E. Power added efficiency

Thermal resistance

Rth(ch-c) *2

*2 :Channel-ca

Publication Date : Apr., 2011

1

<

High-power GaAs FET (small signal gain stage) >

MGF2407A

S to Ku BAND / 0.28W

non - matched

MGF2407A TYPICAL CHARACTERISTICS( Ta=25deg.C )

Po,PAE vs. Pin (f=14.5GHz)MGF2407A S-parameters( Ta=25deg.C , VDS=10(V),IDS=75(mA) )

f

(GHz)

S Parameters(Typ.)

S11 S21 S12 S22 K

MSG/MAGMagn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) - dB

S11,S22 vs. f S21,S12 vs. f

4 0.968 -112.5 1.766 81.5 0.024 -6.0 0.713 -70.5 0.380 18.7

6 0.929 -135.5 1.279 48.5 0.028 -6.0 0.758 -93.5 0.813 16.6

8 0.891 -157.5 1.147 26.0 0.033 -17.0 0.777 -116.0 0.948 15.4

10 0.833 -180.0 1.111 -5.0 0.041 -30.5 0.782 -139.0 1.176 11.8

12 0.719 158.0 1.080 -36.0 0.050 -50.0 0.793 -164.5 1.583 8.9

14 0.469 133.5 1.030 -85.0 0.059 -82.0 0.818 168.0 2.276 6.1

16 0.172 -165.5 0.967 -153.0 0.073 -123.0 0.911 144.5 1.245 8.2

Publication Date : Apr., 2011

2

<

High-power GaAs FET (small signal gain stage) >

MGF2407A

S to Ku BAND / 0.28W

non - matched

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making miconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with miconductors

may lead to personal injury, fire or property damage. Remember to give due consideration to safety when

making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) u of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding the materials

•The materials are intended as a reference to assist our customers in the lection of the Mitsubishi

miconductor product best suited to the customer’s application; they do not convey any licen under any

intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any

third-party’s rights, originating in the u of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in the materials.

•All information contained in the materials, including product data, diagrams, charts, programs and

algorithms reprents information on products at the time of publication of the materials, and are subject

to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It

is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized

Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product

listed herein.

The information described here may contain technical inaccuracies or typographical errors. Mitsubishi

Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from the

inaccuracies or errors.

Plea also pay attention to information published by Mitsubishi Electric Corporation by various means,

including the Mitsubishi Semiconductor home page (/).

•When using any or all of the information contained in the materials, including product data, diagrams,

charts, programs, and algorithms, plea be sure to evaluate all information as a total system before making

a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes

no responsibility for any damage, liability or other loss resulting from the information contained herein.

•Mitsubishi Electric Corporation miconductors are not designed or manufactured for u in a device or

system that is ud under circumstances in which human life is potentially at stake. Plea contact

Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when

considering the u of a product contained herein for any specific purpos, such as apparatus or systems

for transportation, vehicular, medical, aerospace, nuclear, or undera repeater u.

•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or

in part the materials.

•If the products or technologies are subject to the Japane export control restrictions, they must be

exported under a licen from the Japane government and cannot be imported into a country other than

the approved destination.

Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of

destination is prohibited.

•Plea contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor

for further details on the materials or the products contained therein.

Publication Date : Apr., 2011

3

MITSUBISHI MGF2407A 说明书

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