2024年3月1日发(作者:沙果树图片)
< High-power GaAs FET (small signal gain stage) >
MGF2407A
S to Ku BAND / 0.28W
non - matched
DESCRIPTION
The MGF2407A, power GaAs FET with an N-channel schottky
gate, is designed for u in S to Ku band amplifiers.
FEATURES
High output power
Po=24.5dBm(TYP.) @f=14.5GHz
High linear power gain
GLP=8.0dB(TYP.) @f=14.5GHz
High power added efficiency
P.A.E.=30%(TYP.) @f=14.5GHz,P1dB
APPLICATION
S to Ku Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=75mA Refer to Bias Procedure
Absolute maximum ratings
(Ta=25C)
Symbol Parameter Ratings Unit VGDO
VGSO
ID
IGR
IGF
PT*1
Tch
Tstg
Gate to drain voltage
Gate to source voltage
Drain current
Rever gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-15 V
Mitsubishi Electric Corporation puts the maximum
-15 V
effort into making miconductor products better
200 mA
and more reliable , but there is always the
-0.6 mA
possibility that trouble may occur with them.
2.5 mA
Trouble with miconductors may lead to personal
1.5 W
injury , fire or property damage. Remember to give
due consideration to safety when making your
175 C
circuit designs , with appropriate measure such
-65 to +175C
as (I) placement of substitutive , auxiliary circuits ,
(ii) u of non-flammable material or (iii) prevention
against any malfunction or mishap.
Keep Safety first in your circuit designs!*1:Tc=25C
Electrical characteristics
(Ta=25C)
Symbol Parameter
IDSS
gm
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power
Linear power gain
Test conditions Limits Unit
VDS=3V,VGS=0V
VDS=3V,ID=0.5mA
VDS=3V,ID=75mA
VDS=10V,ID(RF off)=75mA
f=14.5GHz
ΔVf method
Min. Typ. Max.
200 mA
100 150
- mS
50 65
-1
7
-
-2.5
8
-
-4
-
100
V
dB
C/W
23 24.5 - dBm
- 30 - %
VGS(off)
P1dB
GLP
P.A.E. Power added efficiency
Thermal resistance
Rth(ch-c) *2
*2 :Channel-ca
Publication Date : Apr., 2011
1
<
High-power GaAs FET (small signal gain stage) >
MGF2407A
S to Ku BAND / 0.28W
non - matched
MGF2407A TYPICAL CHARACTERISTICS( Ta=25deg.C )
Po,PAE vs. Pin (f=14.5GHz)MGF2407A S-parameters( Ta=25deg.C , VDS=10(V),IDS=75(mA) )
f
(GHz)
S Parameters(Typ.)
S11 S21 S12 S22 K
MSG/MAGMagn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) - dB
S11,S22 vs. f S21,S12 vs. f
4 0.968 -112.5 1.766 81.5 0.024 -6.0 0.713 -70.5 0.380 18.7
6 0.929 -135.5 1.279 48.5 0.028 -6.0 0.758 -93.5 0.813 16.6
8 0.891 -157.5 1.147 26.0 0.033 -17.0 0.777 -116.0 0.948 15.4
10 0.833 -180.0 1.111 -5.0 0.041 -30.5 0.782 -139.0 1.176 11.8
12 0.719 158.0 1.080 -36.0 0.050 -50.0 0.793 -164.5 1.583 8.9
14 0.469 133.5 1.030 -85.0 0.059 -82.0 0.818 168.0 2.276 6.1
16 0.172 -165.5 0.967 -153.0 0.073 -123.0 0.911 144.5 1.245 8.2
Publication Date : Apr., 2011
2
<
High-power GaAs FET (small signal gain stage) >
MGF2407A
S to Ku BAND / 0.28W
non - matched
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making miconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with miconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) u of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding the materials
•The materials are intended as a reference to assist our customers in the lection of the Mitsubishi
miconductor product best suited to the customer’s application; they do not convey any licen under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the u of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in the materials.
•All information contained in the materials, including product data, diagrams, charts, programs and
algorithms reprents information on products at the time of publication of the materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from the
inaccuracies or errors.
Plea also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (/).
•When using any or all of the information contained in the materials, including product data, diagrams,
charts, programs, and algorithms, plea be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation miconductors are not designed or manufactured for u in a device or
system that is ud under circumstances in which human life is potentially at stake. Plea contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the u of a product contained herein for any specific purpos, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undera repeater u.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part the materials.
•If the products or technologies are subject to the Japane export control restrictions, they must be
exported under a licen from the Japane government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Plea contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on the materials or the products contained therein.
Publication Date : Apr., 2011
3
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