5820

1N5820-1N58221N5820-1N5822

3.0AmpereSchottkyBarrierRectifiers

AbsoluteMaximumRatings*T

A

=25°Cunlessotherwinoted

*Theratingsarelimitingvaluesabovewhichtherviceabilityofanymiconductordevicemaybeimpaired.

ElectricalCharacteristicsT

A

=25°Cunlessotherwinoted

DiscretePOWER&Signal

Technologies

©1998FairchildSemiconductorCorporation

Features

•3.0ampereoperationatT

A

=95°C

withnothermalrunaway.

•Foruinlowvoltage,high

frequencyinvertersfree

wheeling,andpolarity

protectionapplications.

ParameterDeviceUnits

1N58201N58211N5822

PeakRepetitiveReverVoltage203040V

MaximumRMSVoltage142128V

DCReverVoltage(RatedV

R

)

203040V

MaximumReverCurrentT

A

=25°C

@ratedV

R

T

A

=100°C

0.5

20

mA

mA

MaximumForwardVoltage@3.0A

@9.4A

475

850

500

900

525

950

mV

mV

TypicalJunctionCapacitance

V

R

=4.0V,f=1.0MHz

190pF

DO-201AD

COLORBANDDENOTESCATHODE

SymbolParameterValueUnits

I

O

AverageRectifiedCurrent

3/8"leadlength@T

A

=95

°

C

3.0A

i

f(surge)

PeakForwardSurgeCurrent

8.3mssinglehalf-sine-wave

Superimpodonratedload(JEDECmethod)

80A

P

D

TotalDeviceDissipation

Derateabove25

°

C

3.6

36

W

mW/

°

C

R

θ

JA

ThermalResistance,JunctiontoAmbient28

°

C/W

T

stg

StorageTemperatureRange-65to+125

°

C

T

J

OperatingJunctionTemperature-65to+125

°

C

1.0min(25.4)

0.210(5.33)

0.190(4.83)

0.052(1.32)

0.048(1.22)

0.375(9.53)

0.285(7.24)

Dimensionsin

inches(mm)

1N5820-1N5822SchottkyBarrierRectifiers

(continued)

TypicalCharacteristics

ReverCharacteristics

510

0.01

0.1

1

10

100

REVERSEVOLTAGE(V)

R

E

V

E

R

S

E

C

U

R

R

E

N

T

(

m

A)

T=125C

º

J

T=75C

º

J

T=25C

º

J

1N5820

1N5822

1N5821

ForwardCurrentDeratingCurve

120140

0

1

2

3

4

LEADTEMPERATURE(C)

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A)

º

SINGLEPHASE

HALFWAVE

60HZ

RESISTIVEOR

INDUCTIVELOAD

.375"9.5mmLEAD

LENGTHS

ForwardCharacteristics

0.20.30.40.50.60.70.80.9

0.1

1

10

20

FORWARDVOLTAGE(V)

F

O

R

W

A

R

D

C

U

R

R

E

N

T

(

A)

PulWidth=200

µ

S

T=25C

º

J

1N5820

1N5822

1N5821

JunctionCapacitance

0.10.4141040100

10

20

40

60

80

100

200

400

600

800

1000

REVERSEVOLTAGE(V)

C

A

P

A

CI

T

A

N

C

E

(

p

F

)

Non-RepetitiveSurgeCurrent

0

10

20

30

40

50

60

70

80

NUMBEROFCYCLESAT60Hz

F

O

R

W

A

R

D

S

U

R

G

E

C

U

R

R

E

N

T

(

A)

8.3msSingleHalfSine-Wave

JEDECMethod