Power MOSFET
FEATURES
•Isolated Package
•H igh Voltage Isolation = 2.5 kV RMS (t = 60 s;
f = 60 Hz)
•Sink to Lead Creepage Distance 4.8 mm
•Logic-Level Gate Drive •R DS(on) Specified at V GS = 4 V and 5 V
•Fast Switching •Ea of paralleling •Lead (Pb)-free
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The molding compound ud provides a high isolation capability and a low the
rmal resistance between the tab and external heatsink. This isolation is equivalent to using a 100micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
Notesbethereorbesquare
a.Repetitive rating; pul width limited by maximum junction temperature (e fig. 11).
b.V DD = 25 V, starting T J = 25 °C, L = 583 µH, R G = 25 Ω, I AS = 20 A (e fig. 12c).
c.I SD ≤ 30 A, dI/dt ≤ 200 A/µs, V DD ≤ V DS , T J ≤ 175 °C.
d. 1.6 mm from cas
e.
PRODUCT SUMMARY
V DS (V)60
R DS(on) (Ω)V GS = 5.0 V 0.050Q g (Max.) (nC)35Q gs (nC)7.1Q gd (nC)25Configuration
Single
ORDERING INFORMATION
Package TO-220 FULLPAK Lead (Pb)-free IRLIZ34GPbF SiHLIZ34G-E3SnPb
IRLIZ34G SiHLIZ34G
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwi noted
PARAMETER SYMB O L LIMIT UNIT Drain-Source Voltage V DS 60
V
Gate-Source Voltage V GS ± 10
惠特尼休斯顿经典歌曲Continuous Drain Current V GS at 5.0 V
T C = 25 °C
I D 20A T C = 100 °C 14
死机英文
Puld Drain Current a I DM 80
beforelongLinear Derating Factor 0.28W/°C Single Pul Avalanche Energy b E AS 200mJ Maximum Power Dissipation T C = 25 °C P D 42W Peak Diode Recovery dV/dt c dV/dt 4.5V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature)for 10 s 300d
mannequinMounting Torque 6-32 or M3 screw
10 lbf · in
1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may apply
Vishay Siliconix
Notes
a.Repetitive rating; pul width limited by maximum junction temperature (e fig. 11).
b.Pul width ≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMB
L TYP.MAX.UNIT Maximum Junction-to-Ambient R thJA -65°C/W
Maximum Junction-to-Ca (Drain)
acquiredR thJC
-
3.6
kollieFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ca
Fig. 12a - Unclamped Inductive Test Circuit
rervesFig. 12b - Unclamped Inductive Waveforms
altek
怎样搭配冬装
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
