专利名称：Silicon nitride--TEOS oxide, salicide blocking layer for deep sub- micron devices
发明人：Kin-Leong Pey,Soh-Yun Siah,Yong-Meng Lee 申请号：US09/115724
申请日：19980715
公开号：US06025267A五杀英文
公开日：brillante
20000215finish的用法>side by side
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摘要：A method for forming lf-aligned, metal silicide, (salicide), layers, on polysilicon gate structures, and on source/drain regions, located in a first region of a miconductor substrate, while avoiding the salicide formation, on polysilicon gate structures, and on source/drain regions, located in a cond region of a miconductor substrate, has been developed. A composite insulator shape, comprising an overlying silicon nitride layer, and an underlying TEOS deposited, silicon oxide layer, is ud to block polysilicon, as well as silicon regions, in the cond region of the miconductor substrate, from salicide formation. Unwanted silicon oxide spacers, created on the sides of polysilicon gate structures, during the patterning of the composite insulator shape, is lectively removed using dilute hydrofluoric acid solutions.
申请人：CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
afk什么意思代理人：George O. Saile,Romary L Pike
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