专利名称：Method and system for etching high-k陈情表翻译
dielectric materials
发明人：Lee Chen,Audunn Ludviksson
仁爱英语七年级上册课件
申请号：US10670795
申请日：20030926
公开号：US07202169B2
公开日：
karl wolf
britain
rumia
20070410
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专利附图：
摘要：A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers.
nebraskaAlternately, high-k layers can be anisotropically etched of in accordance with a patterned photoresist or hard mask, where a hyperthermal beam of neutral atoms is ud to aid in the reaction of an etch reactant with a high-k layer. Alternately, a hyperthermal beam of neutral atoms or a plasma treatment can ud to modify a high-k layer, and subquently etch the modified high-k layer utilizing an etch reactant that reacts with the modified high-k layer. In still another embodiment of the invention, the hyperthermal beam of neutral atoms is ud to etch a high-k layer through physical bombardment of the high-k layer.
申请人：Lee Chen,Audunn Ludviksson
地址：Austin TX US,Scottsdale AZ US
prentation是什么意思国籍：US,US
李小璐英语代理机构：Pillsbury Winthrop Shaw Pittman LLP
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