DATA SHEET
Caution Obrve precautions when handling becau the devices are nsitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, plea confirm that this is the latest version.
Not all devices/types available in every country. Plea check with local NEC Compound Semiconductor Devices reprentative for availability and additional information.
The mark shows major revid points.
Document No. PU10521EJ01V0DS (1st edition)
(Previous No. P13865EJ1V0DS00)
Date Published September 2004 CP(K) Printed in Japan
© NEC Compound Semiconductor Devices, Ltd. 1999, 2004
FEATURES
• Ideal for low-noi, high-gain amplification applications
上农
• NF = 1.1 dB TYP., G a = 16 dB TYP. @ V CE = 2 V, I C = 5 mA, f = 2 GHz
• Maximum available power gain: MAG = 19 dB TYP. @ V CE = 2 V, I C = 20 mA, f = 2 GHz • f T = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number Quantity英文怀旧经典歌曲
Supplying Form
2SC5508 50 pcs (Non reel) • 8 mm wide embosd taping
2SC5508-T2
3 kpcs/reel
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25°C)
Parameter
蒙昧主义
Symbol
Ratings Unit
现行犯Collector to Ba Voltage V CBO 15 V Collector to Emitter Voltage V CEO 3.3 V Emitter to Ba Voltage V EBO 1.5 V Collector Current I C 35 mA Total Power Dissipation P tot
Note
115 mW
Junction Temperature T j 150 °C Storage Temperature
T stg
–65 to +150
°C
Note Free air
Data Sheet PU10521EJ01V0DS
2
THERMAL RESISTANCE
Parameter
Symbol
Ratings Unit
Junction to Ca Resistance R th j-c 150 °C/W Junction to Ambient Resistance
R th j-a 650 °C/W
ELECTRICAL CHARACTERISTICS (T A = +25 °C)
Parameter Symbol Test Conditions M I N. TYP. MAX. Unit
DC Characteristics Collector Cut-off Current I CBO V CB = 5 V, I E = 0 mA – – 200 nA Emitter Cut-off Current I EBO V EB = 1 V, I C = 0 mA – – 200 nA DC Current Gain h FE
matter是什么意思
Note 1
V CE = 2 V, I C = 5 mA
50
70
cos化妆
100
–
RF Characteristics Gain Bandwidth Product f T V CE = 3 V, I C = 30 mA, f = 2 GHz 20 25 – GHz Inrtion Power Gain |S 21e |2
V CE = 2 V, I C = 20 mA, f = 2 GHz 14
17
–
dB
Noi Figure
NF
V CE = 2 V, I C = 5 mA, f = 2 GHz, Z S = Z opt
– 1.1 1.5 dB
Rever Transfer Capacitance C re Note 2
V CB = 2 V, I E = 0 mA, f = 1 MHz – 0.18 0.24 pF Maximum Available Power Gain MAG Note 3
V CE = 2 V, I C = 20 mA, f = 2 GHz – 19 – dB Maximum Stable Power Gain MSG
Note 4
V CE = 2 V, I C = 20 mA, f = 2 GHz –
20 – dB Gain 1 dB Compression Output Power P O (1 dB) V CE = 2 V, I C = 20 mA Note 5
, f = 2 GHz – 11 – dBm 3rd Order I ntermodulation Distortion Output Intercept Point
OIP 3
V CE = 2 V, I C = 20 mA红玫瑰的英文
Note 5
, f = 2 GHz
–
22
–
dBm
Notes 1. Pul measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to ba capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when P O (1 dB) is output
h FE CLASSIFICATION
Rank FB Marking T79 h FE Value
50 to 100
(K – √ (K 2 – 1) ) S 21
S 12 S 21 S 12
Data Sheet PU10521EJ01V0DS
3
TYPICAL CHARACTERISTICS (T A = +25°C, unless otherwi specified)
Thermal/DC Characteristics
Collector to Emitter Voltage V CE (V)Collector Current I C (mA)
D C C u r r e n t G a i n h F E
Ambient Temperature T A (˚C), Ca Temperature T C (˚C)Ba to Emitter Voltage V BE (V)
T o t a l
P o w e r D i s s i p a t i o n
P t o t (m W )
C o l l e c t o r C u r r e n t
I C (m A )
50403020100
200100
10
1
C o l l e c t o r
C u r r e n t I C (m A )
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE, CASE TEMPERATURE
COLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.COLLECTOR CURRENT
Capacitance/f T Characteristics
Collector to Ba Voltage V CB (V)
R e v e r s e T r a n s f e r C a p a c i t a n c e C r e (p F )0
1.0
2.0
3.0
4.0dior是什么意思
5.0
G a i n B a n d w i d t h P r o d u c t f T (G H z )
eveningCollector Current I C (mA)
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.
Data Sheet PU10521EJ01V0DS
4
Gain Characteristics
Collector Current I C (mA)
Collector Current I C (mA)
Frequency f (GHz)
I n s e r t i o n P o w e r G a i n |S
21e |2 (d B )M a x i m u m A v a i l a b
l e P o w e r G a i n M A G (d B )M a x i m u m S t a b l e P o w e r G a i n M S G (d B )
I n s e r t i o n P o w e r G a i n |S 21e |2 (d B )M a x i m u m A v a i l a b l e P o w e r G a i n M A G (d B )M a x i m u m S t a b l e P o w e r
G a i n M S G (d B )
I n s e r t i o n P o w e r G
a i n |S 21e |2
(d B )M a x i m u m S t a b l e P o w e r G a i n M S G (d B )
0.1
1.0
10.0
this is怎么读
110
100302520151050
110
100
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Output Characteristics
Input Power P in (dBm)O u t p u t P o w e r P o u t (d B m )
C o l l e c t o r C u r r e n t I C (m A )
C o l l e c t o r C u r r e n t I C (m A )
Input Power P in (dBm)
O u t p u t P o w e r P o u t (d B m )
–20
–15–10–50
5
1251007550
250–20
–15–10–505
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
Remark The graphs indicate nominal characteristics.
Data Sheet PU10521EJ01V0DS
5
Noi Characteristics
Collector Current I C (mA)
Collector Current I C (mA)
Collector Current I C (mA)
Collector Current I C (mA)
N o i s e F i g u r e N F (d B )
A s s o c i a t e d G a i n G a (d
B )
A s s o c i a t e d G a i n G a (d
B )
N o i s e F i g u r e N F (d B )
N o i s e F i g u r e N F (d B )
A s s o c i a t e d G a i n G a (d
B )
A s s o c i a t e d G a i n G a (d
B )
N o i s e F i g u r e N F (d B )
65
43210
110
100
30
2520151050
6
5
43210
3025
2015
1050110
100
110
100
65
43210
30
252015
105
0110
100
6
5
4
3210
3025
2015
105
0NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noi parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input.Click here to download S-parameters. [RF and Microwave] → [Device Parameters]URL l.com/
