专利名称：WAFER CHARGES MONITORING
发明人：Chih-Chiang WU,Chun-Chin KANG,Yu-Ho
NI,Chien-Ta FENG
申请号：US16593835nicole linkletter
immortal申请日：20191004
公开号：US20200035526A1
property公开日：
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20200130今天几月几
专利内容由知识产权出版社提供
range是什么意思专利附图：
摘要：Apparatus and method for monitoring wafer charges are propod. A
conductive pin, a conductive spring and a conductive line are configured in ries to
connect the backside surface of the wafer and the sample conductor so that the backside
surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity nsor positioned clo to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. The sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity nsor are positioned outside the chamber where the wafer is placed and procesd, so as to simplify the apparatus inside the chamber and reduce the contamination risk.
申请人：ADVANCED ION BEAM TECHNOLOGY, INC.
april是几月地址：Hsinshu TW夹克的英文
形单影只国籍：TW
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