VRF150
PRELIMINARY INFORMATION
DESCRIPTION:绯闻女孩第三季插曲
The VRF150 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military
applications requiring high power and gain without compromising reliability, ruggedness, and intermodulation distortion.
ABSOLUTE MAXIMUM RATINGS (Tca = 25°C)
Symbol
Parameter
英迈的意思Value
Unit
chestV (BR)DSS Drain-Source Voltage 125 V V DGO Drain-Gate Voltage 125 V V GS Gate-Source Voltage ±40 V I D Drain Current
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16 A P DISS Total Device Power Dissipation
300 W T J Max Operating Junction Temperature +200 °C T STG
Storage Temperature
propecia
-65 to +150
°C
Thermal Data Thermal Data
R è(J-C)
Thermal Resistance Junction-Ca
0.6
365自考网°C/W
Features
• 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V
• 150W WITH 18dB MIN GAIN @ 30MHz, 50V • EXCELLENT STABILITY & LOW IMD • COMMON SOURCE CONFIGURATION
• 30:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS • NITRIDE PASSIVATED
• REFRACTORY GOLD METALLIZATION
BROADBAND HF/VHF VERTICAL D-MOS
ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS
150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET 1. DRAIN 3. GATE 2. SOURCE 4. SOURCE
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元器件交易网
VRF150 PRELIMINARY INFORMATION
ELECTRICAL SPECIFICATIONS (Tca = 25°C)C)
STATIC
STATIC
Value
Symbol Test Conditions
Min. Typ. Max. Unit Off Characteristics:
disconnected
V(BR)DSS V GS = 0V I DS = 100mA 125 --- --- V
I DSS V GS = 0V V DS = 50V --- --- 5.0 mA
I GSS V GS = 20V V DS = 0V --- --- 1.0 µA On Characteristics:
V GS(Q) V DS = 10V I D = 250mA 1.0 3.0 5.0 V V DS(ON) V GS = 10V I D = 10A 1.0 2.0 5.0 V
G FS V DS = 10V I D = 250mA 5.0 --- --- mho Dynamic Characteristics:
C ISS V GS = 0V V DS = 50V f = 1 MHz --- 480 --- pF
C OSS V GS = 0V V DS = 50V f = 1 MHz --- 230 --- pF
C RSS V GS = 0V V DS = 50V f = 1 MHz --- 40 --- pF FUNCTIONAL TESTS
Value
Symbol Test Conditions
Min. Typ. Max. Unit P OUT f = 150MHz V DD = 50V I DQ = 250mA 150 --- W
G PS f = 150MHz V DD = 50V P OUT = 150W PEP I DQ = 250mA --- 10 --- dB
G PS f = 30MHz V DD = 50V P OUT = 150W PEP I DQ = 250mA --- 18 --- dB
ηD f = 150MHz V DD = 50V P OUT = 150W PEP I DQ = 250mA --- 50 --- %
IMD(d3)f1 = 30MHz f2=30.001MHz P OUT = 150W PEP V DD = 50V I DQ = 250mA ---
-32
---
dBc
Load Mismatch f = 30MHz V DD = 50V P OUT = 150W PEP V DQ = 250mA
30:1 VSWR - All Pha Angles
No degradation in Output Power
VRF150 PRELIMINARY INFORMATION
151
VRF150
PRELIMINARY INFORMATION Power Out vs. Power In Power Out vs. Power In
Vdd = 50V, Idq = 250mA, Freq = 175 MHz
0.00
星巴克回应瑞幸20.0040.0060.0080.00100.00120.00140.00160.000.00
2.00 4.00 6.008.0010.0012.0014.0016.00
Pin (W)
P o u t (W )
Gain vs. Power Out Gain vs. Power Out
Vdd = 50V, Idq = 250mA, Freq = 175 MHz
8.08.59.09.510.010.511.011.512.00.00
20.00
40.00
60.00
eric gordon80.00100.00
120.00
140.00
160.00
Pout (W)
G a i n (d B )
