桃花源记的翻译文
STC4STC4614
614evanescent
N&P Pair Enhancement Mode MOSFET
10A /-10A
types
STANSON TECHNOLOGY
DESCRIPTION
The STC4614is the N &P-Channel enhancement mode power field effect transistor
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using high cell density DMOS trench technology.This high density process is especially tailored to mi
nimize on-state resistance and provide superior switching performance.This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits,where high-side switching,low in-line power loss and resistance to transient are needed .
PIN CONFIGURATION SOP-8
PART
MARKING
FEATURE
N-Channel �40V/10A,R DS(ON)=24mΩ(Typ.)
@V GS =10V
�40V/8.0A,R DS(ON)=30mΩ
@V GS =4.5V
酒英语�40V/6.0A,R DS(ON)=36mΩ
@V GS =2.5V
P-Channel �-40V/-10A,R DS(ON)=38mΩ(Typ.)
@V GS =-10V
�-40V/-8.0A,R DS(ON)=46mΩ
@V GS =-4.5V
�Super high density cell design for extremely
low R DS(ON)
�Exceptional on-resistance and maximum DC
current capability �SOP-8
package
STC4STC4614
614
N&P Pair Enhancement Mode MOSFET
10A
/-10A
STANSON TECHNOLOGY
ABSOULTE MAXIMUM RATINGS (Ta =25℃Unless otherwi noted )
Parameter
Symbol Typical
N P Unit Drain-Source Voltage V DSS 40-40V Gate-Source Voltage V GSS
baci什么意思
±20±20V Continuous Drain Current (TJ=150℃)
T A =25℃T A =70℃
I D 10.08.0-10.0-8.0A Puld Drain Current I DM 25-25A Continuous Source Current (Diode Conduction)I S
2.3-2.3A Power Dissipation
T A =25℃T A =70℃
P D 2.51.6
2.81.8
W Operation Junction Temperature T J -55/150℃Storgae Temperature Range T STG -55/150℃Thermal Resistance-Junction to Ambient
T ≦10Sec Sready State
R θJA
5080
5280
℃/W
STC4STC4614
614
N&P Pair Enhancement Mode MOSFET
10A /-10A
STANSON TECHNOLOGY
ELECTRICAL CHARACTERISTICS (Ta =25℃Unless otherwi noted )
Parameter
Symbol Condition Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V (BR)DSS
V GS =0V,I D =10mA V GS =0V,I D =-10mA N P 40-40V
Gate Threshold Voltage V GS(th)
V DS =VGS,I D =250uA
V DS =VGS,I D =-250uA N P 0.5-1.0
1.0-3.0V Gate Leakage Current I GSS
韩汉互译翻译器
V DS =0V,V GS =±20V
V DS =0V,V GS =±20V N P ±100±100nA
Zero Gate Voltage Drain
Current I DSS T J =55℃V DS =36V,V GS =0V
V DS =-36V,V GS =0V N P 1-1uA V DS =32V,V GS =0V
V DS =-32V,V GS =0V N P 10-10
On-State Drain Current I D(on)
V DS ≧5V,V GS =10V
V DS ≦-5V,V GS =-10V N P 10-40
A
Drain-source On-Resistance R DS(on)
V GS =10V,I D =10A V GS =-10V,I D =-7.2A
N P 0.0200.0220.0250.025Ω
V GS =4.5V,I D =8.0A V GS =-4.5V,I D =-5.6A N P 0.0230.030
0.0300.040
Forward Tran Conductance g fs
V DS =15V,I D =6.2A
V DS =-10V,I D =-9.0A N P 1324S
Diode Forward Voltage V SD
I S =2.3A,V GS =0Vgranted
I S =-2.3A,V GS =0V
N P 0.8-0.8 1.2-1.2V
Dynamic
Total Gate Charge Q g N-Channel V DS =20V,V GS =4.5V
I D ≡5.0A P-Channel
V DS =-15V,V GS =-10V
I D ≡-9.0A N P 10161424
nC Gate-Source Charge Q gs N P 2.82.3Gate-Drain Charge
Q gd N P 3.24.5Turn-On Time
t d(on)
tr
N-Channel V DS =20V,R L =4ΩI D =5.0A,R GEN =6Ω
V GEN =10V P-Channel V DS =-15V,R L =15ΩI D =-1A,R GEN =-6Ω
V GEN =10V
N P 6161230nS
N P 10172030Turn-Off Time
t d(off)
tf
N P 206536110N P
635
1280
STC4STC4614
614
N&P Pair Enhancement Mode MOSFETlync是什么
10A /-10A
STANSON TECHNOLOGY
TYPICAL CHARACTERICTICS (N MOS)
STC4STC4614
614
N&P Pair Enhancement Mode MOSFET
10A /-10A
STANSON TECHNOLOGY
TYPICAL CHARACTERICTICS (N
MOS)
afd
STC4STC4614
614
N&P Pair Enhancement Mode MOSFET
10A /-10A
STANSON TECHNOLOGY
YPICAL CHARACTERICTICS (P MOS)
