巨人杀手杰克
草原ppt课件SOT-23場效應晶體管(SOT-23Field Effect
Transistors)
P -Channel Enhancement-Mode MOS FETs P 沟道增强型MOS 场效应管
fanyi■
家庭英文
MAXIMUM
RATINGS
不堪一击的意思最大額定值
Characteristic 特性參數
Symbol 符號Max 最大值Unit 單位Drain-Source V oltage 漏極-源極電壓BV DSS -30V Gate-Source Voltage 栅極-源極電壓
V GS +12V Drain Current (continuous)漏極電流-連續
I D -3.8A Drain Current (puld)漏極電流-脉冲
I DM -15A Total Device Dissipation 總耗散功率
T A =25℃環境溫度爲25℃P D 1250mW Junction 結溫
T J 150℃Solder Temperature/Solder Time 焊接溫度/焊接時間
T/t 260/10℃/S Storage Temperature 儲存溫度
T stg
-55to+150
℃
AO3401
■ELECTRICAL CHARACTERISTICS 電特性
(T A =25℃unless otherwi noted 如無特殊說明，溫度爲25℃
)
Characteristic 特性參數
Symbol 符號Min 最小值Typ 典型值Max 最大值Unit 單位Drain-Source Breakdown Voltagebrat
漏極-源極擊穿電壓(I D =-250uA,V GS =0V)BV DSS -30——V Gate Threshold Voltage
栅極開启電壓(I D =-250uA,V GS =V DS )V GS(th)-0.6—-2V Diode Forward Voltage Drop
重庆托福培训内附二極管正向壓降(I S =-1A,V GS =0V)V SD
—
—
-1
V
Zero Gate Voltage Drain Current
零栅壓漏極電流(V GS =0V,V DS =-24V)(V GS =0V,V DS =-24V ,T A =55℃)I DSS ——
-1-5u A
Gate Body Leakage
栅極漏電流(V GS =+12V,V DS =0V)I GSS ——+100n A Static Drain-Source On-State Resistance 静态漏源導通電阻(I D =-3.8A,V GS =-10V)R DS(ON)—5060mΩ
Static Drain-Source On-State Resistance 静态漏源導通電阻(I D =-2A,V GS =-4.5V)R DS(ON)—6080mΩ
Static Drain-Source On-State Resistance 静态漏源導通電阻(I D =-1A,V GS =-2.5V)R DS(ON)—75100mΩ
Input Capacitance 輸入電容(V GS =0V,V DS =-15V,f=1MHz)C ISS —954—pF Output Capacitance 輸出電容(V GS =0V,V DS =-15V,f=1MHz)C OSS —115—pF Turn-ON Time 开启時間
(V DS =-15V,V GS =-10V,R GEN =6Ω)t (on)— 6.3—ns Turn-OFF Time 关断時間
(V DS =-15V,V GS =-10V,R GEN =6Ω)t (off)
—
38.2
—
ns
gentleman什么意思Pul Width<300μs;Duty Cycle<2.0%
脸部皮肤护理AO3401
■DIMENSION 外形封裝尺寸
單位(UNIT)：
airtightmm
AO3401
