IC datasheet pdf-SD4953,pdf(P-CHANNEL ENHANCEMENT MODE POWER MOSFET)

更新时间:2023-07-23 00:07:47 阅读: 评论:0

Description
The SD4953 provide the designer with the best combination of fast switching, ru ggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is u niversally preferred for all commercial-indu strial su rface mou nt applications and su ited for low voltage applications su ch as DC/DC converters.for your entertainment
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Featureslucky中文歌词
* Simple Drive Requ irement BV DSS- 30 Vprofessionals
* Lower on-resistance R DS(ON)53 mΩ* Fast Switching I D- 5 A Package Dimensions
Absolute Maximum Ratings
Parameter Symbol Ratings Unit Drain-Sou rce Voltage V DS-30 V
Gate-Sou rce Voltage V GS+/- 16 V Continu ou s Drain Cu rrent1I D @T A=25℃-5 A Continu ou s Drain Cu rrent1I D @T A=70℃-4 A
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Pu ld Drain Cu rrent2I DM-20 A
Total Power Dissipation1P D @T A=25℃  2 W Linear Derating Factor0.02 W/℃sixthn
o perating Ju nction and Storage Temperatu re Range Tj, Tstg-55~+150 ℃Thermal Data
difficult的副词
好朋友的英文Parameter Symbol Value Unit Thermal Resistance Ju nction-ambient1Max.Rthj-amb62.5℃/W
Electrical Characteristics (Tj = 25℃unless otherwi specified)
英国文化Source-Drain Diode
Notes: 1. Surface Mounted on FR4 Board, t≦10c.
2. Pul width≦300us, duty cycle≦2%.
Characteristics Curve
Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics
Fig 3. Transconductance v.s. Drain Current Fig 4. On-Resistance v.s. Junction Temperature
Fig 5. Breakdown Voltage v.s. Junction Temperature
Fig 6. Body Diode Forward Voltage v.s. Source Current
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Fig 7. Maximum Safe Operating Area
Fig 8. Gate Threshold Voltage v.s. Junction Temperature

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