专利名称：Low power high voltage ramp-up control
circuit
发明人：Cheng-Hsiung Kuo
申请号：US10177856
申请日：20020620
公开号：US06980047B1
圣诞 英语公开日：
hardly是什么意思20051227zixia
专利内容由知识产权出版社提供
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专利附图：
摘要：A circuit, and a method, provide low power high voltage ramp-up control for on-chip miconductor power supplies, efficiently generating on-chip high voltage to support programming of electrically erasable programmable read only memories,
napsterEEPROMs or flash memory. The on-chip efficiency is achieved by eliminating output leakage. In addition, a feedback-controlled transistor is utilized to slow down the frequency required from a current controlled oscillator stage, and to provide the on-chip high voltage with low power dissipation.
申请人：Cheng-Hsiung Kuo
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地址：Tainan TW
联合王国
国籍：TW
代理人：George O. Saile,Stephen B. Ackerman
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