1- and 2-Axis Magnetic Sensors HMC1001/1002/1021/1022
The Honeywell HMC100x and HMC102x magnetic nsors are one and two-axis surface mount nsors designed for low field magnetic nsing. By adding supporting signal processing, cost effective magnetometers or compassing solutions are enabled. Th e small, low cost solutions are easy to asmble for high volume OEM designs. Applications for the HMC100x and HMC102x nsors
include Compassing,
Navigation Systems, Magnetometry, and Current
Sensing.
The HMC100x and HMC102x nsors utilize Honeywell’s Anisotropic Magnetoresistive (AMR) technology that provides advantages over coil bad magnetic nsors. They are extremely nsitive, low field, solid-state magnetic nsors designed to measure direction and magnitude of Earth’s magnetic fields, from tens of micro-gauss to 6 gauss. Honeywell’s Magnetic Sensors are among the most nsitive and reliable low-field nsors in the industry.
Honeywell continues to maintain product excellence and performance by introducing innovative solid-state magnetic nsor solutions. The are highly reliable, top performance products that are delivered when promid. Honeywell’s magnetic nsor solutions provide real solutions you can count on.
FEATURES BENEFITS
4
Surface Mount 1 and 2-Axis Sensors
major
4Easy to Asmble & Compatible with High Speed SMT Asmbly
4Low Cost
4Designed for High Volume, Cost Effective OEM Designs
44-Element Wheatstone Bridges
船期英文4Low Noi Passive Element Design
4Low Voltage Operations (2.0V)
4Compatible for Battery Powered Applications
4Available in Tape & Reel Packaging
4High Volume OEM Asmbly爱在日落黄昏时下载
4Patented Offt and Set/Ret Straps
4Stray Magnetic Field Compensation
4
Wide Field Range (up to +/-6 Oe)
4Sensor Can Be Ud in Strong Magnetic Field Environments
HMC1001/1002/1021/1022
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HMC1001/1002 SPECIFICATIONS
Characteristics Conditions*
Min Typ Max Units Bridge Elements
Supply Vbridge (Vb) referenced to GND
- 5.0 12 Volts Resistance
Bridge current = 10mA
per bridge
600 850 1200 ohms Operating Temperature Ambient -55 150 °C Storage Temperature Ambient, unbiad
-55 175 °C Field Range Full scale (FS) – total applied field
-2 +2 gauss Linearity Error
Best fit straight line
± 1 gauss ± 2 gauss
0.1 1.0 0.5 2.0 %FS Hysteresis Error 3 sweeps across ±2 gauss 0.05 0.10 %FS Repeatability Error 3 sweeps across ±2 gauss
0.05 0.10 %FS S/R Repeatability
Output variation after alternate S/R puls
Vb = 5V, I SR = 3A
100 µV Bridge Offt Offt = (OUT+) – (OUT-)
Field = 0 gauss after Set pul, Vb = 8V
-60 -15 +30 mV Sensitivity Set/Ret Current = 3A
2.5
3.2
4.0 mV/V/gauss Noi Density @ 1Hz, Vb=5V 29 nV/sqrt Hz Resolution 10Hz Bandwidth, Vb=5V 27 µgauss Bandwidth Magnetic signal (lower limit = DC) 5 MHz Disturbing Field Sensitivity starts to degrade. U S/R pul to restore nsitivity. 5 gauss Sensitivity Tempco T A = -40 to 125°C, Vb=8V T A = -40 to 125°C, Ibridge=5mA -0.32 -0.30 -0.06 -0.28 %/°C Bridge Offt Tempco T A = -40 to 125°C, No Set/Ret T A = -40 to 125°C, With Set/Ret
±0.03 ±0.001 %/°C Bridge Ohmic Tempco T A = -40 to 125°C
徐州环球雅思0.25 %/°C Cross-Axis Effect Cross field = 1 gauss, Happlied = ±1 gauss
登楼翻译With t/ret
±3 ±0.5
%FSwebrvices
Max. Expod Field No perming effect on zero reading
10000 gauss Set/Ret Straps
Resistance Measured from S/R+ to S/R-
1.5 1.8 ohms Current
0.1% duty cycle, or less, 2µc current pul
2.0
3.0 5 Amp Resistance Tempco T A = -40 to 125°C
0.37 %/°C Offt Straps
ergResistance Measured from OFF+ to OFF- 2.5 3.5 ohms Offt Constant
DC Current
Field applied in nsitive direction 46 51 56 mA/gauss Resistance Tempco T A = -40 to 125°C 0.39
%/°C
* Tested at 25°C except stated otherwi.
HMC1001/1002/1021/1022
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HMC1021/1022 SPECIFICATIONS
Characteristics Conditions*
Min Typ Max Units Bridge Elements
Supply Vbridge (Vb) referenced to GND
2 5.0 25 Volts Resistance
Bridge current = 10mA
per bridge
800 1100 1300 ohms Operating Temperature Ambient -55 150 °C Storage Temperature Ambient, unbiad
-55 175 °C Field Range Full scale (FS) – total applied field
-6 +6 gauss Linearity Error
Best fit straight line
± 1 gauss ± 3 gauss ± 6 gauss
0.05 0.4 1.6
%FS
Hysteresis Error 3 sweeps across ±2 gauss 0.08 %FS Repeatability Error 3 sweeps across ±2 gauss
egoist
0.08 %FS Bridge Offt Offt = (OUT+) – (OUT-)
Field = 0 gauss after Set pul, Vb = 5V
-10 ±2.5 +11.25 mV Sensitivity Set/Ret Current = 0.5A
0.8 1.0 1.25 mV/V/gauss Noi Density @ 1Hz, Vb=5V 48 nV/sqrt Hz Resolution 10Hz Bandwidth, Vb=5V 85 µgauss Bandwidth Magnetic signal (lower limit = DC) 5 MHz Disturbing Field Sensitivity starts to degrade. U S/R pul to restore nsitivity. 20 gauss Sensitivity Tempco T A = -40 to 125°C, Vb=5V T A = -40 to 125°C, Ibridge=5mA -0.32 -0.30 -0.06 -0.28 %/°C Bridge Offt Tempco T A = -40 to 125°C, No Set/Ret T A = -40 to 125°C, With Set/Ret
讲座开场白
±0.05 ±0.001 %/°C Bridge Ohmic Tempco T A = -40 to 125°C
0.25 %/°C Cross-Axis Effect Cross field = 1 gauss, Happlied = ±1 gauss
+0.3 %FS Max. Expod Field No perming effect on zero reading
10000 gauss Set/Ret Straps
Resistance Measured from S/R+ to S/R-
5.5 7.7 9 ohms Current
0.1% duty cycle, or less, 2µc current pul
0.5 0.5 4.0 Amp Resistance Tempco T A = -40 to 125°C
0.37 %/°C Offt Straps
Resistance Measured from OFF+ to OFF- 38 50 60 ohms Offt Constant
DC Current
Field applied in nsitive direction
4.0 4.6 6.0 mA/gauss Resistance Tempco T A = -40 to 125°C
0.39
%/°C
* Tested at 25°C except stated otherwi.
HMC1001/1002/1021/1022
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KEY PERFORMANCE DATA
HMC1001/1002/1021/1022
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PACKAGE / PINOUT SPECIFICATIONS
back to the futureArrow indicates direction of applied field that generates a positive output voltage after a SET pul.
BASIC DEVICE OPERATION
The Honeywell HMC100x and HMC102x Anisotropic Magneto-Resistive (AMR) nsors are simple resistive Wheatstone bridges to measure magnetic fields and only require a supply voltage for the measurement. With power supply applied to the bridges, the nsors convert any incident magnetic field in the nsitive axis directions to a differential voltage outputs. In addition to the bridge circuits, each nsor has two on-chip magnetically coupled straps; the offt strap and the t/ret strap. The straps are Honeywell patented features for incident field adjustment and magnetic domain alignment; and eliminate the need for external coils positioned around the nsors.
The magnetoresistive nsors are made of a nickel-iron (Permalloy) thin-film deposited on a silicon wafer and patterned as a resistive strip element. In the prence of a magnetic field, a change in the
bridge resistive elements caus a corresponding change in voltage across the bridge outputs.
