Cell 电池 | |||||
Crystalline silicon | 晶体硅 | ||||
Photovoltaic | 光伏 | ||||
bulk properties | 体特性 | ||||
at ambient temperature | 在室温下 | ||||
wavelength | 波长 | ||||
absorption coefficient | 吸收系数 | ||||
electron-hole pairs | 电子空穴对 | ||||
photon | 光子 | ||||
density | nobles密度 | ||||
defect | 缺陷 | ||||
surface | 表面 | ||||
electrode | 电极 | ||||
p－type for hole extraction p | 型 | ||||
空穴型 | |||||
n－type for electron | extraction | n | |||
型电子型 | |||||
majority carriers | 多数载流子 | ||||
minority carriers | 少数载流子 | ||||
surface | recombination | velocity | |||
（ SRV） 表面复合速率 | |||||
back surface field | （BSF） 背场 urinterface | ||||
at the heavily doped regions | 重 | ||||
掺杂区 | |||||
saturation current density Jo | 饱 | ||||
The limiting efficiency | 极限效率 | ||
reflection | 反射 | ||
light- trapping | 光陷 | ||
intrinsic material | 本征材料 | ||
bifacial cells | 双面电池 | ||
monocrystalline | 单晶 | ||
float zone material | FZ | － Si | |
Czochralski silicon | Cz | － Si | |
industrial cells | 工业电池 | ||
a high concentration of | oxygen 高 | ||
浓度氧 | |||
Block or ribbon | 块或硅带 | ||
Crystal defects | 晶体缺陷 | ||
grain boundaries | 晶界 | ||
dislocation | 位错 | ||
solar cell fabrication | 太阳能电池 | ||
制造 | |||
supersaturation | 过饱和 | |||
dead layer | 死层 | |||
electrically | inactive | phosphorus | ||
非电活性磷 | ||||
interstitial | 空隙 | |||
the eutectic temperature | 共融温度 | |||
boron － doped substrate | 掺硼基体 | |||
passivated | emitter | and rear | ||
locally diffud cells | PERL | 电池 | ||
loss 损失 | ||||
the front surface | whenyoubelieve前表面 | |||
metallization | techniques | 金属化技 | ||
术 | ||||
metal grids | 金属栅线 | |||
laboratory cells | freeloop实验室电池 | |||
the metal lines | 金属线 | |||
lective emitter | 选择性发射极 | |||
photolithographic | 光刻 | |||
gradient 斜度 | ||||
precipitate | 沉淀物 | |||
localized contacts | 局部接触 | |||
point contacts | 点接触 | |||
passivated | emitter | rear totally | ||
solder 焊接 | |||||
bare silicon | 裸硅片 | ||||
high refraction index | 发怔高折射系数 | ||||
reflectance | 反射 | ||||
encapsulation | 封装 | ||||
antireflection coating | ARC | 减反 | |||
射层 | |||||
an optically | thin dielectric | layer | |||
光学薄电介层 | |||||
interference effects | 干涉效应 | ||||
texturing | 制绒 | ||||
alkaline solutions | 碱溶液 | ||||
etch 刻蚀 / 腐蚀 | |||||
anisotropically | 各向异性地 | ||||
plane 晶面 | |||||
pyramids | 金字塔 | ||||
a few microns | 几微米 | ||||
etching time and temperature | 腐蚀 | ||||
时间和温度janna | |||||
manufacturing process | 制造工艺 | ||||
process flow | 工艺流程 | ||||
high yield | 高产量 | ||||
starting material | 原材料 | ||||
solar grade | 太阳级 | ||||
a pudo －square shape | 单晶型状 | ||||
saw damage removal | 去除损伤层 | ||||
fracture | 裂纹 | ||||
acid solutions | 酸溶液 | ||||
immer 沉浸 | |||||
grand canyontank 槽 | |||||
texturization | 制绒 | ||||
phosphorus diffusion | 磷扩散 | |||
eliminate | adsorbed | metallic | ||
impurities | 消除吸附的金属杂质 | |||
quartz furnaces | 石英炉 | |||
quartz boats | 石英舟 | |||
quartz tube | 石英炉管 | |||
bubbling nitrogen through liquid | ||||
POCL3小氮 | ||||
belt furnaces | 链式炉 | |||
back contact cell | 背电极电池 | |||
rever voltage | 反向电压 | |||
rever current | 反向电流 | |||
amorphous | glass | of | phospho － | |
silicates | 非晶玻璃 | |||
diluted HF | 稀释 HF溶液 | |||
junction isolation | 结绝缘 | |||
coin －stacked 堆放 | ||||
barrel －type reactors | 桶状反应腔 | |||
fluorine | 氟 | |||
fluorine compound 氟化物 | ||||
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