专利名称：Poly resistor and poly eFu design for
replacement gate technology
发明人：Harry Chuang,Kong-Beng Thei
dict申请号：US12201602
申请日：20080829
公开号：US07977754B2
公开日：
i arched for you
20110712
专利内容由知识产权出版社提供
专利附图：goround
whenyouaregone歌词摘要：A miconductor device and method for fabricating a miconductor device is disclod. The miconductor device compris a miconductor substrate; an active region of the substrate, wherein the active region includes at least one transistor; and a
oregon
八年级上册英语期末试卷passive region of the substrate, wherein the passive region includes at least one resistive structure dispod on an isolation region, the at least one resistive structure in a lower plane than the at least one transistor.weirdest
申请人：Harry Chuang,Kong-Beng Thei
教师节表彰大会讲话>完善英文地址：Hsin-Chu TW,Hsin-Chu TWprincipal怎么读
国籍：TW,TW
代理机构：Haynes and Boone, LLP
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