专利名称：Structure and method for failure analysis in
a miconductor device
fek发明人：Ki-Am Lee,Sang-Deok Kwon,Jong-Hyun Lee
英文歌曲下载申请号：US11291242
申请日：20051130
公开号：US20060118784A1
above公开日：
流行英文名字
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申请留学加拿大
20060608
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影评英文专利附图：
摘要：In a method and structure for miconductor failure analysis, the structure compris: a plurality of analytic fields dispod on a predetermined area of afullscale
miconductor device; miconductor transistors arranged in each of the analytic fields,
the miconductor transistors arranged in an array; wordlines arranged on each of the plurality of the analytic fields, connecting the miconductor transistors with each other in a first direction; and bitline structures on each of the plurality of the analytic fields, connecting the miconductor transistors with each other in a cond direction, wherein the bitline structures are configured in different patterns in each of the plurality of analytic fields.
申请人：Ki-Am Lee,Sang-Deok Kwon,Jong-Hyun Lee索引是什么
地址：Yongin-si KR,Seoul KR,Sunwon-si KR
国籍：KR,KR,KR
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