Silicon PNP Power Transistors2SA765 DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
APPLICATIONS
·Desinged for general-purpo power
braggartamplifier and applications
PINNING(e Fig.2)
PIN DESCRIPTION
1Ba
端午节用英语怎么说2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
UNIT SYMBOL PARAMETER CONDITIONS VALUE V CBO Collector-ba voltage Open emitter -80 V
V CEO Collector-emitter voltage Open ba -80 V视丹如绿
英文学习V EBO Emitter-ba voltage Open collector -6 V
吸血鬼日记 第三季
我身边的活雷锋I C Collector current -6 A
P C Collector power dissipation T C=25℃40 W
T j Junction temperature 150 ℃
T stg Storage temperature -55~150 ℃
CHARACTERISTICS
现大洋Tj=25℃unless otherwi specified
MAX UNIT
SYMBOL PARAMETER CONDITIONS MIN
TYP.
V(BR)CEO Collector-emitter breakdown voltage I C=-10mA ;I B=0 -80 V V(BR)CBO Collector-ba breakdown voltage I C=-1mA ;I E=0 -80 V
V
productionmanager-1.5 V CEsat Collector-emitter saturation voltage I C=-4A; I B=-0.4A
V
-2.0 V BEsat Ba-emitter saturation voltage I C=-4A; I B=-0.4A读书吧少年
μA
-10
I CBO Collector cut-off current V CB=-80V; I E=0
μA
-10
I EBO Emitter cut-off current V EB=-6V; I C=0
h FE DC current gain I C=-1A ; V CE=-4V 50
MHz
f T Transition frequency I C=-0.5A ; V CE=-12V
10
英语四级考试真题2
PACKAGE OUTLINE
Fig.2 outline dimensions
3
