1/11
October 2002s
32 TIMES STANDARD B-SERIES OUTPUT CURRENT DRIVE SINKING CAPABILITY - 136 mA TYP . AT V DD = 10V, V DS = 1V
s QUIESCENT CURRENT SPECIF. UP TO 20V s 5V, 10V AND 15V PARAMETRIC RATINGS s
INPUT LEAKAGE CURRENT
I I = 100nA (MAX) AT V DD = 18V T A = 25°C s 100% TESTED FOR QUIESCENT CURRENT s
MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"
DESCRIPTION
HCF40107B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF40107B is a dual 2-input NAND buffer/driver containing two independent 2-input NAND buffers with open-drain single n-channel transistor outputs. This device features a wired-OR capability and high output sink current capability (136 mA typ. at V DD = 10V, V DS = 1V).
HCF40107B
DUAL 2-INPUT NAND BUFFER/DRIVER
ORDER CODES
PACKAGE TUBE T & R
DIP HCF40107BEY SOP
HCF40107BM1
HCF40107M013TR
HCF40107B
2/11
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
FUNCTIONAL DIAGRAM
TRUTH TABLE
* : Requires external and pull-up resistor (R L ) to V DD .# : Without pull-up resistor (3-state).
PIN No SYMBOL NAME AND FUNCTION 2, 1, 7, 6A, B, D, E Input 3, 5
C,F Outputs
4V SS
Negative Supply Voltage 8
V DD
Positive Supply Voltage
A B C
L L H*Z #H L H*Z #L H H*Z #
H
H
L
HCF40107B
3/11
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are tho values beyond which damage to the device may occur. Functional operation under the conditions is not implied.
All voltage values are referred to V SS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter
Value Unit V DD Supply Voltage -0.5 to +22V V I DC Input Voltage -0.5 to V DD + 0.5
V I I DC Input Current
± 10mA P D Power Dissipation per Package
200mW Power Dissipation per Output Transistor 100mW T op Operating Temperature -55 to +125°C T stg
Storage Temperature
-65 to +150
°C
Symbol Parameter
Value Unit V DD Supply Voltage 3 to 20V V I Input Voltage
0 to V DD V T op
Operating Temperature
-55 to 125
°C
HCF40107B
4/11
DC SPECIFICATIONS
The Noi Margin for both "1" and "0" level is: 1V min. with V DD =5V, 2V min. with V DD =10V, 2.5V min. with V DD =15V ** Measured with external pull-up resistor, R L = 10k Ω to V DD .*** Forced output disabled.
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, C L = 50pF, R L = 200K Ω, t r = t f = 20 ns)
(*) R L is external pull-up resistor to V DD.
Symbol
Parameter
Test Condition
Value Unit
V I (V)V O (V)
|I O |(µA)V DD (V)
T A = 25°C -40 to 85°C -55 to 125°C Min.
Typ.Max.Min.
Max.Min.
Max.I L
Quiescent Current
0/550.02515030µA
0/10100.021*******/15150.022********/20
200.04
100
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600
V IH**
High Level Input Voltage 0.5/4.5<15 3.5 3.5 3.5V
1/9<1107771.5/13.5<11511
11
11
V IL**
Low Level Input Voltage 4.5/0.5<15 1.5 1.5 1.5V
9/1<11033313.5/1.5<1
154
4
4
I OL
Output Sink Current
50.4521321612mA
51544683025100.510497437281011089136685115
0.5
15
66
100
50
38
佐罗 西班牙I OH Output Drive Current
英国留学申请时间No Internal Pull-up Device
mA
I IH, I IL Input Leakage
accu的用法Current
0/18Any Input 18±10-5±0.1±0.1±1µA I OH, I OL ***
3-State Output
Leakage Current 0/18
1818
±10-422
20
µA C I Input Capacitance Any Input 57.5
pF C O
Output
Capacitance
Any Output
30
pF
Symbol
Parameter
Test Condition
Value (*)Unit
V DD (V)Min.
Typ.Max.t PHL t PLH Propagation Delay Time
High to Low
behalf5R L * = 120Ω
100200ns 104590153060Low to High
feeder
5R L * = 120Ω100200ns
10601201550100t THL t TLH Transition Time
High to Low 5R L * = 120Ω
50100ns
102040151020Low to High
5R L * = 120Ω
50100ns
10357015
25
玉米的营养价值50
HCF40107B
lowa是什么意思
5/11
TYPICAL APPLICATIONS Line-driver Circuit.
Interface of 40107B with Triac, with COS/MOS Component and Triac isolated.
Direct Dc Driver Interface of 40107B with a Triac.
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