专利名称：GaN-BASED THRESHOLD SWITCHING
DEVICE AND MEMORY DIODE知名留学机构
发明人：Kai Fu,Houqiang Fu,Yuji Zhao
申请号：US17215282
申请日：20210329
公开号：US20210242281A1
公开日：
大洋洲英语>软件测试工程师培训
英语四六级答案
20210805
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专利附图：
深爱的英文摘要：A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the
粤语翻译unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a cond electrode on a cond surface of the GaN substrate.
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申请人：Kai Fu,Houqiang Fu,Yuji Zhao
4级地址：Tempe AZ US,Tempe AZ US,Chandler AZ US
国籍：US,US,US
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