Semiconductor-air gap grating fabrication using a

更新时间:2023-07-10 18:18:34 阅读: 评论:0

beat it什么意思专利名称:Semiconductor-air gap grating fabrication
using a sacrificial layer process拆散的解释
发明人:Michael P. Nesnidal,David V. Forbes
申请号:US10210799
申请日:20020801
公开号:US06649439B1
铅笔盒的英文公开日:
英文词典下载
20031118
专利内容由知识产权出版社提供
专利附图:剧照英文>photobucket
标点符号的正确用法
摘要:An optical device () including a first miconductor layer () on which is deposited a dielectric layer that is patterned and etched to form dielectric strips () as part of a diffraction grating layer. Another miconductor layer () is grown on the first
paint怎么读
miconductor layer () between the dielectric strips () to provide alternating dielectric ctions () and miconductor ctions. In an alternate embodiment, a dielectric layer is deposited on a first miconductor layer (), and is patterned and etched to define dielectric strips (). The miconductor layer () etched to form openings () between the dielectric strips (). A miconductor material () is grown within the openings () and then another miconductor layer () is grown over the entire surface after removing the dielectric strips. Either embodiment may be modified to provide a diffraction grating with air channels ().
申请人:NORTHROP GRUMMAN CORPORATION
代理机构:Warn, Burgess & Hoffmann, P.C.
代理人:John A. Miller, Esq.
更多信息请下载全文后查看考研英文>bourgeois

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