专利名称：ACTIVE LAYER STACKED ELEMENT 发明人：KOYAMA KENICHI
努力学习的英文sarah的音标申请号：JP9810690
申请日：19900413
公开号：JPH03296256A
吸血鬼damon生活照公开日：
卡玛拉哈里斯
19911226孙权劝学原文及翻译
gun专利内容由知识产权出版社提供
birthdayparty摘要：PURPOSE:To lower the value of contact resistance and reduce dispersion by shortening each electrode to the transistor having the structure of two active layers, and, for the lower layer transistor, removing the interface between a columnar electrode and a pedestal electrode. CONSTITUTION:After formation of lower layer transistors 5, 6, and 7, a silicon oxide film 3 to become a first insulating film is formed. Subquently, upper layer transistors 5a, 6a, and 7a are formed, and the whole face is covered with a cond silicon oxide film 4 to become a cond insulating film. Next, by the exposure process using a photoresist and the dry etching process, to the upper layer transistor, a cond contact hole, in the silicon oxide film 4, and to the lower transistor, a first contact hole, in the silicon oxide film 3, are formed, and then only in the first contact hole, a columnar electrode 8a by tungsten is formed. Lastly, aluminum is deposited, and wirings 10 are formed the columnar electrode 8a and in the cond contact hole of the upper layer transistor.bought
申请人：NEC CORPways
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