customize是什么意思decline什么意思专利名称：MANUFACTURE OF STACKED
SEMICONDUCTOR DEVICE
申请号：JP1293283
申请日：19830131unlucky
公开号：JPS6362088B2
yaho公开日：
nda
only you 歌词
19881201
朗文在线词典
专利内容由知识产权出版社提供
摘要：PURPOSE:To attain excellent recrystallization and obtain a high performance three- dimensional IC by tting the scanning direction in the irradiation of lar beam to <111>, <112> or <113> through the u of single crystal miconductor having the surface orientation of (110) or that similar to it as the ba substrate. CONSTITUTION:A ba oxide film 2 is formed lectively to the surface of single crystal silicon substrate 1 having the surface orientation of (110) where a miconductor element is formed, an aperture 11 is provided, thereby the substrate surface is expod. A polycrystal silicon film 3 is formed on the entire part. The polycrystal silicon film 3 is perfectly isolated and insulated surrounding it with the SiO2 21 and thereby the rectangular polycrystal silicon island 5 is formed, where the longer axis direction is parallel to the orientation <111> of the ba substrate. Next, this miconductor substrate is placed, for example, on the vacuum-absorbing stage and is then heated. During this period, it is irradiated with the CW-Ar lar beam. As indicated by the arrow mark (x), scanning is carried out almost in parallel to the longer axis direction of polycrystalline silicon island 5. The polycrystalline silicon island 5 is recrystallized by irradiation of lar, the crystal 51 of surface (110) is formed at the entire part of island along the direction of arrow Y with the substrate surface of aperture 11 ud as the ed and the single crystal silicon island 51 is formed.
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