V CES Collector-to-Emitter Voltage 600V I C Continuos Collector Current @ T C = 25°C 50A
@ T C = 100°C
38I CM Puld Collector Current 200I LM Peak Switching Current
200I F Diode Continuous Forward Current @ T C = 100°C 25I FM Peak Diode Forward Current 200V
correct是什么意思GE Gate-to-Emitter Voltage
± 20V V ISOL RMS Isolation Voltage, Any Terminal to Ca, t = 1 min 2500P D
Maximum Power Dissipation @ T C = 25°C 250W
per single IGBT
总理翻译@ T C = 100°C 100
25MT060WF
50 A
V CES = 600V
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
Parameters
Max
Units
Warp Speed IGBT
Gen. 4 Warp Speed IGBT Technology HEXFRED TM Antiparallel Diodes with UltraSoft Rever Recovery
Very Low Conduction and Switching Loss Optional SMT Thermistor Aluminum Nitride DBC
Very Low Stray Inductance Design for High Speed Operation
Features
Optimized for Welding, UPS and SMPS Applications
Operating Frequencies > 20 kHz Hard Switching,>200 kHz Resonant Mode
Low EMI, requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals
Very Low Junction-to-Ca Thermal Resistance UL Approved E78996
Benefits
M MTP
Bulletin I27143 Rev.B 07/03
25MT060WF
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Bulletin I27143 Rev.B 07/03
Q g Total Gate Charge (turn-on)175263nC
I C = 25A Q ge Gate-Emitter Charge (turn-on)2741V CC = 480V Q gc Gate-Collector Charge (turn-on)71107V GE = 15V E on Turn-On S witching L oss 134201µJ
R g = 5Ω , I C = 25A E off Turn-Off Switching Loss 415623V CC = 480V E ts Total Switching Loss 549824V GE = ±15V
E on Turn-On S witching L oss 391586µJ
R g = 5Ω , I C = 25A E off Turn-Off S witching L oss 492738V CC = 480V
E ts Total Switching Loss 8831324V GE = ±15V, T J = 125°C C ies Input Capacitance
36105415pF
V GE = 0V
C oes Output Capacitance
7141071V CC = 30V C res Rever Transfer Capacitance 5887
f = 1.0 MHz
trr Diode Rever Recovery Time 50ns V R = 200V, I C = 25A Irr Diode Peak Rever Current 4.5A di/dt = 200A/µs
Qrr
Diode Recovery Charge
112nC di (rec)M/dt
Diode PeakRate of Fall of Recovery 250
A/µs During t b
Switching Characteristics @ T J = 25°C (unless otherwi specified)
Parameters
Min Typ Max Units Test Conditions
V (BR)CES Collector-to-Emitter Breakdown Voltage 600
V V GE = 0V, I C = 250µA
∆V (BR)CES /Temperature Coeff. of +0.6V/°C V GE = 0V, I C = 4mA (25-125°C)∆T J
六级改革
Breakdown Voltage
V CE(ON)
Collector-to-Emitter Saturation Voltage
2.22
3.14V
V GE = 15V, I C = 25A 2.43 3.25V GE = 15V, I C = 50A
1.65 1.93V GE = 15V, I C = 25A T J = 150°C
2.08 2.45V GE = 15V, I C = 50A
T J = 150°C V GE(th)Gate Threshold Voltage 3
6
V CE = V GE , I C = 250µA
∆V GE(th)/Temperature Coeff. of -17mV/°C V CE = V GE , I C = 250µA (25-125°C)∆T J Threshold Voltage g fe Transconductance
43
S V CE = 100V, I C = 25A, PW = 80µs I CES Zero Gate Voltage Collector Current (1)250µA V GE = 0V, V CE = 600V, T J = 25°C 10mA V GE = 0V, V CE = 600V, T J = 150°C I GES Gate-to-Emitter Leakage Current ±250nA V GE = ± 20V V FM
Diode Forward Voltage Drop
1.36 1.64V
I C = 25A 1.57 1.93I C = 50A
1.19 1.42I C = 25A, T J = 150°C 1.48
1.80I C = 50A, T J = 150°C Electrical Characteristics @ T J = 25°C (unless otherwi specified)
Parameters
Min Typ Max Units Test Conditions
(1) I CES includes also opposite leg overall leakage
Bulletin I27143 Rev.B 07/03
3
25MT060WF
Thermal- Mechanical Specifications
T J Operating Junction Temperature Range - 40150°C T STG Storage Temperature Range - 40
125R thJC Junction-to-Ca IGBT 0.5°C/ W
Diode 0.9
R thCS
Ca-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (2) (external shortest distance in air
5.5mm between two terminals)
Creepage (2) (shortest distance along external 8
mm surface of the insulating material between 2 terminals )Weight
66g
Parameters
Min
Typ Max
Units
(2) Standard version without optional thermistor
Fig. 4 - Maximum Collector Current vs. Ca
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
25
50
75
100
125
150
T C Ca Temperature (°C)
0102030405060I C M a x i m u m D C C o l l e c t o r C u r r e n t (A )
20
40
60
奎宁水80
100
插头英文
120
140
160
T J , Junction Temperature (°C)
1.25
1.75
2.25
2.75
V C E
, C o l l e c t o r -t o E m i t t e r V o l t a g e (V )
25MT060WF
4
Bulletin I27143 Rev.B 07/03
Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Ca (IGBT)
Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Ca (DIODE)
t 1 , Rectangular Pul Duration (c)
t 1 , Rectangular Pul Duration (c)
T h e r m a l R e s p o n s e ( Z )
Bulletin I27143 Rev.B 07/03
5
25MT060WF
Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Loss vs. Gate
Resistance
Fig. 10 - Typical Switching Loss vs.
Junction Temperature
1
10
100
1000
V CE (V)
01000
20003000
40005000
60007000C a p a c i t a n c e (p F )
50
100
150
200
Q G, Total Gate Charge (nC)
0.0
4.0
8.0
12.0
16.0
V G E , G a t e -t o -E m i t t e r V o l t a g e (V )
10
20
30
40
50
60
R G , Gate Resistance (Ω)
0.0
0.5
1.0
1.5
S w i t c h i n g L o s s e s (m J )
20
40
60
80
100
leanon
120
140
160
T J , Junction Temperature (°C)
0.1
1
10
T o t a l S
w i t c h i n g L o s s e s (m J )
25MT060WF
i love you forever jewel
6
Bulletin I27143 Rev.B 07/03
Fig. 11 - Typical Switching Loss vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
托福听力笔记
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
10
20
30
40
50
60
I C, Collector Current (A)
0.0
0.5
1.0
1.5
2.0S w i t c h i n g L o s s e s (m J )
1
10
100
紫色英语怎么读1000
V CE , Collector-to-Emitter Voltage (V)
110
100
1000
I C , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V F ( V )
110
100
I n s t a n t a n e o u s F o r w a r d C u r r e n t - I F ( A )
