TOP SIDE COOLING FOR GANPOWER DEVICE

更新时间:2023-06-28 12:43:24 阅读: 评论:0

专利名称:TOP SIDE COOLING FOR GANPOWER DEVICE
发明人:OTREMBA, Ralf,SCHIESS, Klaus
申请号:EP17187833.3全美超模大赛谢霆锋
申请日:20170824
公开号:EP3297022A1
公开日:
20180321
考雅思好还是托福好专利内容由知识产权出版社提供
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intellectual property专利附图:
hkex摘要:A packaged miconductor includes an electrically insulating encapsulant having opposite facing first and cond planar sides. A thermally conductive substrate is partially embedded in the enmrq
2016考研国家分数线capsulant such that an outer side of the substrate is expod at the first side of the encapsulant and an inner side of the substrate is
contained within the encapsulant. A GaN bad power miconductor device is completely embedded in the encapsulant and includes: a main side having electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side the substrate. A plurality of electrically conductive leads is partially embedded in the substrate and electrically connected to the device terminals. Vertical portions of the leads extend away from the substrate towards the cond side of the encapsulant.
申请人:Infineon Technologies Austria AG
地址:Siemensstras 2 9500 Villach AT
水稻的英文
国籍:AT
代理机构:Moore, Derek
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