January 2011
FCH47N60NF 600V N-Channel MOSFET, FRFET
SupreMOS TM
FCH47N60NF
N-Channel MOSFET, FRFET
600V, 47A, 65m ΩFeatures
•R DS(on) = 57.5m Ω (Typ.) @ V GS = 10V, I D = 23.5A •Ultra Low Gate Charge (Typ. Q g = 121nC)•Low Effective Output Capacitance •100% Avalanche Tested •RoHS Compliant
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi bad technologies. By utilizing this advanced technology and preci process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, rver/telecom power, FPD TV power, ATX power, and industrial power applications.
D
看图填词G
S
G S
D
TO-247
MOSFET Maximum Ratings T C = 25o C unless otherwi noted
Thermal Characteristics
Symbol Parameter
Ratings Units V DSS Drain to Source Voltage 600V V GSS Gate to Source Voltage ±30V I D Drain Current -Continuous (T C
= 25o C)
45.8A -Continuous (T C = 100o C)
28.9I DM Drain Current
- Puld (Note 1)137.4A E AS Single Puld Avalanche Energy (Note 2)2926mJ I AR Avalanche Current 15.3A E AR Repetitive Avalanche Energy 3.7mJ dv/dt MOSFET dv/dt Ruggedness
100V/ns Peak Diode Recovery dv/dt (Note 3)50V/ns P D Power Dissipation
(T C = 25o
C)368W - Derate above 25o C
2.94W/o C
视觉传达设计自考
T J , T STG Operating and Storage Temperature Range
-55 to +150
o C T L
Maximum Lead Temperature for Soldering Purpo,1/8” from Ca for 5 Seconds
300
o
C
Symbol Parameter
Ratings Units R θJC Thermal Resistance, Junction to Ca 0.34o
C/W
R θCS Thermal Resistance, Ca to Heat Sink (Typical)0.24R θJA
Thermal Resistance, Junction to Ambient
40
*Drain current limited by maximum junction temperature
FCH47N60NF 600V N-Channel MOSFET, FRFET
Package Marking and Ordering Information
Electrical Characteristics T C = 25o C unless otherwi noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size
2017元旦Tape Width
Quantity FCH47N60NF
suffered
FCH47N60NF商店英语
TO-247
--30
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV DSS Drain to Source Breakdown Voltage I D = 1mA, V GS = 0V, T C = 25o C 600--V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient
睡眠经销商
I D = 1mA, Referenced to 25o C -0.78-V/o C I DSS Zero Gate Voltage Drain Current V DS = 480V, V GS = 0V --10μA V DS = 480V, V GS = 0V, T C = 125o C
--100I GSS
Gate to Body Leakage Current
V GS = ±30V, V DS = 0V
--
±100
nA
V GS(th)Gate Threshold Voltage
V GS = V DS , I D = 250μA 2-4V R DS(on)Static Drain to Source On Resistance V GS = 10V, I D = 23.5A -57.565.0m Ωg FS
Forward Transconductance
V DS = 40V, I D = 23.5A
-52
100
S
C iss Input Capacitance V DS = 100V, V GS = 0V f = 1MHz
-46006120pF C oss Output Capacitance
-195260pF C rss Rever Transfer Capacitance - 3.0 5.0pF C oss Output Capacitance
V DS = 380V, V GS = 0V, f = 1MHz -108-pF C oss eff.Effective Output Capacitance V DS = 0V to 380V, V GS = 0V
-492-pF Q g(tot)Total Gate Charge at 10V V DS = 380V, I D = 23.5A,V GS = 10V四级英语
(Note 4)
必克英语
-121157nC Q gs Gate to Source Gate Charge -23-nC Q gd Gate to Drain “Miller” Charge -47-nC ESR
Equivalent Series Resistance(G-S)
Drain Open
-
0.9
-
Ω
t d(on)Turn-On Delay Time V DD = 380V, I D = 23.5A R GEN = 4.7Ω
(Note 4)
-3478ns t r Turn-On Ri Time -2254ns t d(off)Turn-Off Delay Time -117244ns t f
Turn-Off Fall Time
-
4
18
ns
I S Maximum Continuous Drain to Source Diode Forward Current --47A I SM Maximum Puld Drain to Source Diode Forward Current --141A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 23.5A - - 1.2V t rr Rever Recovery Time V GS = 0V, I SD = 23.5A dI F /dt = 100A/μs
implicit-169-ns Q rr
Rever Recovery Charge
- 1.3
- μC崔天琪田丹stronger
Notes:
1. Repetitive Rating: Pul width limited by maximum junction temperature
2. I AS = 15.3A, R G = 25Ω, Starting T J = 25°C
3. I SD ≤ 45.8 A, di/dt ≤ 1200A/μs, V DD ≤ 380V, Starting T J = 25°C
4. Esntially Independent of Operating Temperature Typical Characteristics
FCH47N60NF 600V N-Channel MOSFET, FRFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
