CCD201-20Back Illuminated 2-Pha IMO Series
Electron Multiplying CCD Sensor
INTRODUCTION
The CCD201is a large format nsor (41k 2
)in the L3Vision TM
amendrange of products from e2v technologies.This device us a novel output amplifier circuit that is capable of operating at an equivalent output noi of less than one electron at pixel rates of over 15MHz.This makes the nsor well suited for scientific imaging where the illumination is limited.
face shieldThe nsor is a frame transfer device and can operate in inverted mode to suppress dark current as thi
s is now the dominant noi source (even at high readout rate).The image and store ctions are designed to operate in 2-pha mode,to maximi the highest achievable parallel transfer frequency.The nsor functions by converting photons to charge in the image area during the integration time period,then transferring this charge through the image and store ctions into the readout register.Following transfer through the readout register,the charge is multiplied in the gain register before conversion to a voltage by an output amplifier.
The nsor has two output amplifiers;a low noi,high responsivity output for normal CCD operation and a large signal amplifier for when multiplication gain is employed.
Operation of the high gain mode is controlled by adjustment of the multiplication pha amplitude R 12HV.
GENERAL DATA
Active image area .......
..13.3x 13.3mm Image ction active pixels .....1024(H)x 1024(V)Image pixel size ............13x 13m m Number of output amplifiers ..........2Fill factor ...............100%Additional dark reference columns .......32Additional overscan rows ...
..
(8)
PACKAGE DETAILS (e Fig.15)
Ceramic Package
kidOverall dimensions .........37.4x 26.5mm Number of pins ..............36Inter-pin spacing ........... 2.54mm Mounting position ........
....
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The pin 1marker is
shown in Fig.
15.
STORAGE AND OPERATION TEMPERATURE EXTREMES
MIN
MAX Storage temperature (8C)7200+100Operating temperature (8C)7120+75Temperature ramping (8C/min)
–
5
Note:Operation or storage in humid conditions may give ri to moisture on the nsor surface on cooling,causing irreversible damage.
#e2v technologies (uk)limited 2005A1A-100013Issue 1,June 2005
411/9140
e2v technologies (uk)limited,Waterhou Lane,Chelmsford,Esx CM12QU,UK Telephone:+44(0)1245493493Facsimile:+44(0)1245492492e-mail: Internet:www.
< Holding Company:e2v technologies plc e2v technologies inc.4Westchester Plaza,PO Box 1482,Elmsford,NY10523-1482USA Telephone:(914)592-6050Facsimile:(914)592-5148e-mail:enquiries@e2vtechnologies.us
TYPICAL PERFORMANCE SPECIFICATIONS
Except where otherwi specified,the following are measured for operation at a pixel rate of15MHz,with typical operating voltages. Parameters are given at223K unless specified otherwi.Where parameters are different in the normal and high gain mode,both are given.
PARAMETER UNIT MIN TYPICAL MAX Output amplifier responsivity,HR amplifier(normal mode)(e note1)m V/e7– 5.3–Output amplifier responsivity,LS amplifier(normal mode)(e note1)m V/e7– 1.4–
1–1000 Multiplication register gain,LS amplifier(high gain mode)
(e notes2,3and4)
Peak signal-2-pha IMO e7/pixel50k80k–Charge handling capacity of multiplication register(e note5)e7/pixel–730k–Charge handling capacity of HR amplifier(e note6)e7–280k–Charge handling
capacity of LS amplifier(e note6)e7–1M–
e7rms– 3.1–Readout noi at50kHz with CDS,HR amplifier(normal mode)
(e note6)
e7rms– 6.0–Readout noi at1MHz with CDS,HR amplifier(normal mode)
(e note6)
e7rms–50–Amplifier ret noi(without CDS),HR amplifier(normal mode)
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Readout noi at15MHz with CDS,LS amplifier(normal mode)
e7rms–43–(e note6)
Amplifier ret noi(without CDS),LS amplifier(normal mode)
e7rms–100–(e note6)
Readout noi at1MHz(high gain mode)(e note6)e7rms–51–Maximum frequency(ttling to1%),HR amplifier(e notes6and7)MHz––3 Maximum frequency(ttling to5%),HR amplifier(e notes6and7)MHz–– 4.5 Maximum frequency(ttling to1%),LS amplifier(e note6and7)MHz––13 Maximum frequency(ttling to5%),LS amplifier(e note6and7)MHz––20 Maximum parallel transfer frequency(e note1)MHz–0.9–
cenDark signal at293K(e note8)e7/pixel/s–260530 Dark signal non-uniformity(DSNU)at293K(e note9)e7/pixel/s–90–Excess noi factor(e note10)–H2–NOTES
1.Measured at a pixel rate of1MHz.
2.The typical variation of gain with R12HV is shown in Fig.1.
3.The variation of gain with R12HV at different temperatures is shown in Fig.1.
4.Some increa of R12HV may be required throughout life to maintain gain performance.Adjustment of R12HV should be
limited to the maximum specified under Operating Conditions.
5.When multiplication gain is ud and clock timings optimid,a linear respon of output signal with input signal of better than
3%is achieved for output signals up to400ke7typically.
6.The values are inferred by design and not measured.
7.The quoted maximum frequencies assume a20pF load and that correlated double sampling is being implemented.
8.The quoted dark signal has the usual temperature dependence for inverted mode operation.For operation at high frame rates
with short integration times,there will also be a component generated during readout through the register.Operating at a temperature of293K and10Hz frame rate,the readout component contributes5.8e7/pixel/frame typically,at a gain of1000 and referenced to the image area,and has a temperature dependence consistent with non-inverted mode operation.
There exists a further weakly temperature dependent component,the clock induced charge,which is independent of the integration time.The clock induced charge is dependent on the operating bias
and timings employed and is typically0.2e7/ pixel/frame at T=7558C.
For more information,refer to the technical note"Dark Signal and Clock-Induced Charge in L3Vision TM CCD Sensors".
9.DSNU is defined as the1s variation of the dark signal.
10.The excess noi factor is defined as the factor by which the multiplication process increas the shot noi on the image when
multiplication gain is ud.
100013,page2#e2v technologies
DEVICE COSMETIC PERFORMANCE
Grade1devices are supplied to the blemish specification shown below.
Note that incorrect biasing of the device may result in spurious dark or white blemishes appearing.The will be eliminated if the bias are adjusted.
Test Conditions
Operating mode Devices run in2-pha inverted mode,with an integration time of100ms and a readout rate of
15MHz.
Sensor temperature18+38C.
Multiplication gain Set to approximately1000.
Illumination Set to give a signal level of approximately60e7/pixel/frame.
BLEMISH SPECIFICATION
Black Columns Black defects are counted when they have a responsivity of less than80%of the local mean signal
at approximately the specified multiplication gain and level of illumination.A black column contains
at least9contiguous black defects.
White Columns White defects are pixels having a dark signal generation rate corresponding to an output signal of
greater than5times the maximum specified dark signal level.A white column contains at least9
contiguous white defects.
Pin-Head Columns Pin-head columns are manifest as a partial dark column with a bright pixel showing photorespon
at the end of the column nearest to the readout register.Pin-head columns are counted when the
black column has a responsivity of less than80%of the local mean signal at approximately the
specified multiplication gain and level of illumination.A pin-head column contains at least9
contiguous black defects.
SPECIFICATION
PARAMETER GRADE1SPECIFICATION GRADE2SPECIFICATION
White Columns00
Black/Pin-head Columns16
ORDERING INFORMATION
PART NUMBER OPERATING MODE COATING WINDOW
CCD201-20-*-1222-pha Midband Temporary
*denotes grade of device.
#e2v technologies100013,page3
1000
100
10
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R 12HV (V)
M U L T I P L I C A T I O N G A I N
Figure 1:TYPICAL VARIATION OF MULTIPLICATION GAIN WITH R 12HV AT DIFFERENT TEMPERATURES
Figure 2:TYPICAL VARIATION OF DARK SIGNAL WITH TEMPERATURE
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1071
1072
110
102
103
104
D A R K S I G N A L (e 7/p i x e l /s )
SENSOR TEMPERATURE (8C)
74072002040
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100
90
80
70
60
50
40
30
20
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03004005006007008009001000
WAVELENGTH (nm)
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Q U A N T U M E F F I C I E N C Y (%)
8216
Figure 3:TYPICAL SPECTRAL RESPONSE (At 7208C,no window,midband coating)
#e2v technologies 100013,page 5
ESD HANDLING PROCEDURES
CCD nsors,in common with most high performance IC devices,are static nsitive.In certain cas a static electricity discharge may destroy or irreversibly degrade the device.Accordingly,full anti-static handling precautions should be taken whenever using a CCD nsor or module.The include:
*Working at a fully grounded workbench.*Operator wearing a grounded wrist strap.
*All receiving socket pins to be positively grounded.*
Unattended CCDs should not be left out of their conducting foam or socket.
All devices are provided with internal protection circuits to most gate electrodes but not to the other pins.
Evidence of incorrect handling will terminate the warranty.
EXPOSURE TO RADIATION
Exposure to radiation may irreversibly damage the device and result in degradation of performance.Urs wishing to operate the device in a radiation environment are advid to consult e2v technologies.
