专利名称：Sputtering Chamber Having ICP Coil and
六级分值
Targets on Top Wall
发明人：Ravi Mullapudi,Biju Ninan,Gabriel A.
Calebotta
申请号：US12239659
申请日：20080926
paula deanda公开号：US20100078312A1
actress是什么意思公开日：宝贝用德语怎么说
20100401
专利内容由知识产权出版社提供
土耳其语在线翻译>牢有所养专利附图：
待遇英文摘要：A vacuum chamber has multiple wafer positions, and the wafers are positioned by a rotating pallet. Above a wafer position in the chamber there may be a sputtering
target, a flat inductively coupled plasma (ICP) coil for etching the wafer and/or promoting sputtering, and a TEOS vapor outlet for forming an oxide film on the wafer. As the pallet rotates, a wafer may first have deposited a thin layer of oxide on walls of a via hole at the TEOS position. A metal layer may then be sputtered in the via hole at the sputtering position, and any pinch-off material may be etched away at an etching position.
A magnet behind each target scans back and forth behind the target. Vertical magnet walls substantially surround a sputtering target for confining the sputtered material to an angle that is more normal to the wafer than prior art trajectories to fill narrower vias.
申请人：Ravi Mullapudi,Biju Ninan,Gabriel A. Calebotta
地址：San Jo CA US,Cupertino CA US,Cupertino CA US
威胁英语国籍：US,US,US
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