This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
N- and P-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
•N- and P-Channel Vertical DMOS •Macro Model (Subcircuit Model)•Level 3 MOS
•Apply for both Linear and Switching Application
•Accurate over the −55 to 125°C Temperature Range
•Model the Gate Charge, Transient, and Diode Rever Recovery Characteristics
DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The
possubcircuit model is extracted and optimized over the
SPECIFICATIONS (T J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Conditions
Simulated Data
Measured Data
Unit
Static
V DS = V GS , I D = 250µA N-Ch 1.8Gate Threshold Voltage
opinion是什么意思V GS(th)
V DS = V GS , I D =−250µA P-Ch 2.2V
V DS ≥ 5 V, V GS = 10 V N-Ch 110On-State Drain Current
a
I D(on)V DS ≤−5 V, V GS =−10 V P-Ch
triple play
62
A
V GS = 10 V, I D = 4.9 A
N-Ch 0.0420.044V GS =−10 V, I D =−3.9 A P-Ch 0.0710.062V GS = 4.5 V, I D = 4.1 A N-Ch 0.0570.062Drain-Source On-State Resistance a
赛普健身学院
r DS(on)
V GS =−4.5 V, I D =−3 A
P-Ch 0.1200.105Ω
V DS = 15 V, I D = 4.9 A N-Ch 9.211Forward Transconductance
a
g fs
V DS =−15 V, I D =−2.5 A P-Ch
5稀有金属的意思
5S I S = 1.7 A, V GS = 0 V N-Ch 0.700.80Diode Forward Voltage
a
V SD
I S =−1.7 A, V GS = 0 V
P-Ch
−0.80
−0.82
V
Dynamic b
N-Ch 7.48Total Gate Charge
Q g
P-Ch 9.610N-Ch 1.4 1.4Gate-Source Charge Q gs
P-Ch
2
2N-Ch 1.2 1.2Gate-Drain Charge Q gd
N-Channel
V DS = 10 V, V GS = 10 V, I D = 4.9 A P-Channel
V DS =−10 V, V GS =−10 V, I D =−3.9 A
P-Ch 1.9 1.9Nc
N-Ch 812Turn-On Delay Time t d(on)
P-Ch
128N-Ch 1010Ri Time t r
jiyu
P-Ch 149N-Ch 1323Turn-Off Delay Time t d(off)
P-Ch 1621N-Ch 178Fall Time t f
N-Channel
V DD =10 V, R L = 10Ω
I D ≅ 1 A, V GEN = 10 V, R G = 6ΩP-Channel
V DD =−10 V, R L = 10Ω
I D ≅−1 A, V GEN =−10 V, R G = 6Ω
P-Ch
英文童话2210N-Ch 2425Source-Drain Rever Recovery Time t rr如何锻炼心理素质
I S = 1.7 A, di/dt = 100 A/µs I S =−1.7 A, di/dt = 100 A/µs
P-Ch
30
27
Ns Notes
a. Pul test; pul width ≤ 300µs, duty cycle ≤ 2.
b. Guaranteed by design, not subject to production testing.
协作消费
COMPARISON OF MODEL WITH MEASURED DATA (T J=25°C UNLESS OTHERWISE NOTED) N-Channel MOSFET
P-Channel MOSFET
accelerate
