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High-Side MOSFET Driver for HB LED Drivers
and DC-DC Applications
MAX15054
General Description
The MAX15054 is a high-side, n-channel MOSFET driver for high-voltage applications capable of switching at high frequencies. This device is controlled by a CMOS logic-level signal referenced to ground and features a very short (12ns, typ) propagation delay from input to output. The high-voltage operation and high source/sink-current capability make the MAX15054 ideal for HB LED drivers and DC-DC converters.
The MAX15054 is well suited to complement other Maxim LED driver products such as the MAX16814, MAX16838, MAX16833, MAX16834, and MAX16826. The MAX15054 adds a high-side driver to tho products that include only a low-side driver; it then allows for buck-boost configurations for multistring drivers similar to the MAX16814, MAX16838, and MAX16826, and for buck-boost conversion with output referenced to ground for single-string drivers such as the MAX16834 and MAX16833.
The MAX15054 is available in the industry-standard 6-pin SOT23 package and operates over the -40N C to +125N C automotive temperature range.
Applications
HB LED Drivers for Single and Multiple Strings LED Backlight Drivers
High-Side Driver for DC-DC Converters
(Buck, Buck-Boost, Half-Bridge, Full-Bridge)
Features
S Input Voltage on High-Side n-Channel MOSFET Up
to 60V
S Up to 13.5V Logic Input Independent of Supply
Voltage
S 2A Peak Source and Sink Current S 12ns Propagation Delay
S Ri and Fall Times of 6ns while Driving 1000pF
Capacitance
S Low Input Capacitance
S Low-Side and High-Side Undervoltage Protection S Allows Buck-Boost Topology Referred to Ground
for LED Drivers and DC-DC Converters
S Allows Buck-Boost Topology for Multistring LED
Drivers
S 6-Pin SOT23 Package
19-4747; Rev 0; 9/09
认为英文
+Denotes a lead(Pb)-free/RoHS-compliant package.Pin Configuration appears at end of data sheet.
Ordering Information
PART
TEMP RANGE
PIN-PACKAGE TOP MARK MAX15054AUT+-40N C to +125N C
6 SOT23
ACOM
Typical Operating Circuits
High-Side MOSFET Driver for HB LED Drivers and DC-DC Applications M A X 15054
2 ______________________________________________________________________________________
Stress beyond tho listed under “Absolute Maximum Ratings” may cau permanent damage to t
he device. The are stress ratings only, and functional operation of the device at the or any other conditions beyond tho indicated in the operational ctions of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
V DD to GND .............................................................-0.3V to +6V LX to GND ................................................................-2V to +65V HDRV to LX ................................................-0.3V to (V DD + 0.3V)BST to LX .................................................................-0.3V to +6V HI to GND ..............................................................-0.3V to +15V dV/dt at LX ........................................................................50V/ns Peak Current into HDRV (< 100ns) ......................................Q 2A Continuous Current into HDRV .....................................Q 100mA Continuous Power Dissipation (T A = +70N C)
6-Pin SOT23 (derate 8.7mW/N C above +70N C) .........695.7mW
Thermal Resistance (Note 1) Junction-to-Ambient Thermal Resistance (B JA ) .........115N C/W Junction-to-Ca Thermal Resistance (B JC ) ................80N C/W Operating Temperature Range ........................-40N C to +125N C Maximum Junction Temperature .....................................+150N C
Storage Temperature Range ............................-65N C to +150N C Lead Temperature (soldering, 10s) .................................+300N C ELECTRICAL CHARACTERISTICS
(V DD = V BST = 5V, V LX = V GND = 0V, T A = T J = -40°C to +125°C, unless otherwi noted. Typical values are at T A = T J = +25°C, unless otherwi noted.) (Note 2)
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to /thermal-tutorial.
PARAMETER
SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Supply Voltage V DD 4.6
5.5V V DD Quiescent Supply Current I DD No switching 4075F A BST Quiescent Supply Current I BST No switching
65125F A BST Operating Supply Current I BSTO f SW = 500kHz, no load 0.3
1.3mA V DD Undervoltage Lockout Threshold
V DD_UVLO
V DD rising
3.92
4.22 4.56
V V DD Undervoltage Lockout Threshold Hysteresis 0.2
V
BST-to-LX Undervoltage Lockout Threshold
V BST_
UVLO
BST rising 3.54 3.82 4.1V BST-to-LX Undervoltage
计算机语言翻译
Lockout Threshold Hysteresis 0.2
V
LOGIC INPUT (HI)HI Logic-High Threshold V IH 3.9
V HI Logic-Low Threshold V IL
1.8
V HI Logic-Input Hysteresis 0.9
V HI Input Current I IN HI = GND
-2
+2
F A HI Input Resistance R IN
300
k I
DRIVER
LX Withstand Voltage V LX_MAX 60V BST Withstand Voltage V BST_MAX
悲惨世界原声
65V LX Pulldown Current V LX = 2.5V 500
7401100F A Driver Output Resistance (Sourcing)
R ON_HP V BST - V LX = 4.5V, 100mA sourcing T A = +25N C 1 1.5I T A = +125N C 1.252Driver Output Resistance (Sinking)
R ON_HN V BST - V LX = 4.5V, 100mA sinking
T A = +25N C 0.751I
T A = +125N C
1
1.5
High-Side MOSFET Driver for HB LED Drivers
and DC-DC Applications
MAX15054
my happiness什么意思_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V DD = V BST = 5V, V LX = V GND = 0V, T A = T J = -40°C to +125°C, unless otherwi noted.
Typical values are at T A = T J = +25°C, unless otherwi noted.) (Note 2)
Note 2: All devices are 100% production tested at T A = +25N C. Limits over the operating temperature range are guaranteed by
design.
Note 3: Guaranteed by design.
Figure 1. Turn-On/Turn-Off Propagation Delay
PARAMETER
SYMBOL CONDITIONS
hijackMIN
TYP MAX
UNITS Peak Output Current (Sourcing)I PK_HP V HDRV = 0V 2.5A Peak Output Current (Sinking)I PK_HN
V HDRV = 5V
2.5
A
SWITCHING CHARACTERISTICS
Ri Time
t R
No-load capacitor
1.5ns
C L = 1000pF 6C L = 5000pF 18Fall Time
t F No-load capacitor
1.5ns C L = 1000pF 6C L = 5000pF
16Turn-On Propagation Delay t D_ON Figure 1, C L = 1000pF (Note 3)1125ns Turn-Off Propagation Delay
t D_OFF
Figure 1, C L = 1000pF (Note 3)
11
25
ns
High-Side MOSFET Driver for HB LED Drivers and DC-DC Applications M A X 15054
出国留学文书
4 ______________________________________________________________________________________
Typical Operating Characteristics
(V DD = V BST = 5V, V LX = V GND = 0V, T A = +25°C, unless otherwi noted.)
BST OPERATING SUPPLY CURRENT vs. SWITCHING FREQUENCY
SWITCHING FREQUENCY (kHz)
I B S T O (µA )10001001.0102505007501000125015001750200000.1
10,000
NO LOAD ON HDRV
HI INPUT THRESHOLDS vs. TEMPERATURE
TEMPERATURE (N C)
I N P U T T H R E S H O L D (V )
11095-25-10535506520802.252.502.753.003.253.503.754.00
2.00
-40125
POWER-UP AND POWER-DOWN SEQUENCE
0V
HDRV 1V/div
V DD 1V/div 40µs/div
f SW = 5kHz AT HI
V DD , BST-LX QUIESCENT SUPPLY CURRENT vs. SUPPLY VOLTAGE
SUPPLY VOLTAGE (V)
Q U I E S C E N T C U R R E N T (µA )
5.04.53.54.01.01.52.02.53.00.55101520253035404550556065700
5.5
V DD UNDERVOLTAGE LOCKOUT THRESHOLD vs. TEMPERATURE
TEMPERATURE (N C)
U V L O T H R E S H O L D (V )110956580-105
20
3550-254.0004.0254.050
朝鲜国情
4.0754.1004.1254.1504.1754.2004.2254.2503.975
-40125
BST-LX UNDERVOLTAGE LOCKOUT THRESHOLD vs. TEMPERATURE
TEMPERATURE (°C)
U V L O T H R E S H O L D (V )110956580-105203550-253.6253.6503.6753.7003.7253.7503.7753.8003.8253.8503.8753.600
-40125
POWER-UP AND POWER-DOWN SEQUENCE
0V
HDRV 1V/div V DD 1V/div 400µs/div
High-Side MOSFET Driver for HB LED Drivers
and DC-DC Applications
MAX15054
_______________________________________________________________________________________ 5
Typical Operating Characteristics (continued)
(V DD = V BST = 5V, V LX = V GND = 0V, T A = +25°C, unless otherwi noted.)
2MHz OPERATION
0V 0V
HDRV 2V/div
HI 2V/div
200ns/div
NO LOAD ON HDRV
HDRV OUTPUT HIGH/LOW vs. TEMPERATURE
TEMPERATURE (N C)
O U
T P U T H I G H /L O W (V )
1109580655035205-10-2520406080100120140
-40125
4% DUTY CYCLE AT 2MHz
surface
MAX15054 toc10
10ns/div
icecubeHI 2V/div 0V
0V
HDRV 2V/div 96% DUTY CYCLE AT 2MHz
MAX15054 toc11
2V/div
2V/div
error report
10ns/div
TURN-ON/TURN-OFF PROPAGATION
DELAY vs. TEMPERATURE
TEMPERATURE (°C)
P R O P A G A T I O N D E L A Y
(n s )
110956580-10
5203550-258.59.09.510.010.511.011.512.012.513.0
8.0
-40125
RISE TIME AND FALL TIME
0V
0V
2V/div
2V/div
20ns/div
HI
HDRV
HDRV
4.7nF CAPACITOR CONNECTED FROM HDRV TO GND,LX = GND
HI
TURN-ON AND TURN-OFF PROPAGATION DELAY
0V
1V/div
40ns/div
High-Side MOSFET Driver for HB LED Drivers and DC-DC Applications M A X 15054
6 ______________________________________________________________________________________
Pin Description
Functional Diagram
Detailed Description The MAX15054 n-channel MOSFET driver controls an external high-side MOSF
ET in high-voltage, high-current applications. This driver operates with a supply voltage of 4.6V to 5.5V, and consumes only 300F A of supply current during typical switching operations (f SW = 500kHz) and no-load conditions. The MAX15054 provides 2.5A (typ) sink /source peak current and is capable of operating with large capacitive loads and with switching frequencies up to 2MHz. The device is ud to drive the high-side MOSFET without requiring an isolation device such as an optocoupler or a drive transformer.
The high-side driver is controlled by a CMOS logic referenced to ground and is powered by a bootstrap circuit formed by an external diode and capacitor. Undervoltage lockout (UVLO) protection is provided for both the high- and low-side driver supplies (BST and V DD ) and includes a UVLO hysteresis of 0.2V (typ).The MAX15054’s fast switching times and very short propagation delays (11ns, typ) are ideal for high-frequency applications. Internal logic circuitry prevents shoot-through during output state changes and minimizes package power dissipation.
PIN NAME FUNCTION
1HI 5V CMOS Logic Input. HI is referenced to GND and is capable of withstanding voltages up to 13.5V for any V DD voltage. 2GND Ground
3V DD Input Supply Voltage. Valid supply voltage ranges from 4.6V to 5.5V. Bypass V DD to GND with a 0.1F F ceramic capacitor as clo as possible to the device.
4BST Boost Flying Capacitor Connection. Connect a minimum of a 0.1F F ceramic capacitor between BST and LX for the high-side MOSFET driver supply. Connect a bootstrap Schottky diode between V DD and BST.
5HDRV High-Side Gate-Driver Output. Driver output to drive the high-side external MOSFET gate.
6
LX
Source Connection for High-Side MOSFET. LX also rves as a return terminal for the high-side driver.
