MP2480
5V―36V Input, 3A High
Power LED Driver
The Future of Analog IC Technology
DESCRIPTION
The MP2480 is step-down switching regulator that delivers a constant current of up to 3A to high-power LEDs. It integrates a high-side, high-voltage power MOSFET with a current limit of 4.3A. The wide 5V to 36V input range accommodates a variety of step-down applications, making it ideal for general lighting and LCD backlighting applications. Hysteretic current-mode control helps provide for a very fast respon, which makes the 20kHz dimming frequency possible. MPS’s proprietary feedback control minimizes the number of external components while delivering an LED current with a typical accuracy of ±3%.
The switching frequency goes up to 2MHz, thus permitting smaller components. Thermal shut down, and short circuit protection provide reliable fault-tolerant operation. A 160µA quiescent current allows fo
r u in battery-powered applications.
The MP2480 is available in SOIC8-EP with an expod pad on the bottom. FEATURES
•Wide 5V to 36V Operating Input Range •Up to 95% Efficiency
•Hysteretic Control with No Compensation •No Output Capacitor Required
•±3% LED Current Accuracy
•Up to 2MHz Switching Frequency
•Up to 20kHz Dimming Frequency
•200mV Reference Voltage
•Short-Circuit Protection with Integrated High-Side MOSFET
•Thermal Shut Down
•Available in SOIC8-EP APPLICATIONS
嗜好的意思
•High Power LED Driver
•General Lighting and LCD Backlighting •Constant Current Source
All MPS parts are lead-free and adhere to the RoHS directive. For MPS green status, plea visit MPS website under Quality Assurance. “MPS” and “The Future of Analog IC Technology” are Registered Trademarks of Monolithic Power Systems, Inc.
TYPICAL APPLICATION
fendaORDERING INFORMATION
Part Number Package Top Marking Free Air Temperature (T A) MP2480DN* SOIC8-EP MP2480 -40°C to +85°C
* For Tape & Reel, add suffix –Z (e.g. MP2480DN–Z);
For RoHS compliant packaging, add suffix –LF (e.g. MP2480DN–LF–Z)人教版高一数学课本
PACKAGE REFERENCE
love story mp3ABSOLUTE MAXIMUM RATINGS(1) Supply Voltage (V IN)......................-0.3V to +40V Switch Voltage (V SW)..........-0.5V to (V IN + 0.5V) BST -0.3V to +6V All -0.3V to +6V 150°C Continuous Power Dissipation (T A = 25°C) (2) 2.5W 260°C -65°C to +150°C Recommended Operating Conditions (3) Supply Voltage .5V to 36V EN and 0V to 5V Maximum Junction Temp. (T J)..................125°C Thermal Resistance (4)θJA θJC
<50......10...°C/W Notes:
1) Exceeding the ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature T J(MAX), the junction-to-ambient thermal resistance θJA, and the ambient temperature T A. The maximum allowable continuous power dissipation at any ambient temperature is calculated by P D(MAX)=(T J(MAX)-T A)/θJA. Exceeding the maximum allowable power dissipation will cau excessive die temperature, and the regulator will go into thermal shutdo
wn. Internal thermal shutdown circuitry protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7 4-layer board.
ELECTRICAL CHARACTERISTICS
V IN = 24V, T A= 25°C, unless otherwi noted.
Specifications over temperature are guaranteed by design and characterization.
Parameter Symbol Condition
Min
Typ
Max Units
VIN UVLO threshold 3.6 4.0 4.4 V
VIN UVLO hysteresis 0.4 V
Shutdown supply current V EN = 0V 2 5 µA
Quiescent supply current No load, V FB = 250mV 160 220 µA
Upper switch on resistance (5)R DS(ON)V BST – V SW = 5V 150 mΩ
Upper switch leakage current I SWLK V EN = 0V, V SW = 0V 0.01 1 µA
Current limit I PK V FB = 0.15V 3.5 4.3 A
EN up threshold V ENH 1.4
1.55
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V EN threshold hysteresis V ENHY 320
mV EN input current I ENI V EN =5V 0.01 1 µA
EN sinking current I ENS V EN =2V 2 3 µA
DIM up threshold V DIMH 0.8
1.15
1.5
V DIM threshold hysteresis V DIMHY 300
电话会议英文mV
V DIM =5V -1 1 µA
DIM input current I DIM
V DIM
外教网上英语口语一对一=0V -5 -1 µA
Feedback voltage threshold high (5)V FBH 5V < V IN < 36V, V FB rising from
0V until V SW < 30V
220 225 230 mV
Feedback voltage threshold low (5)V FBL 5V < V IN < 36V, V FB falling
from 0.25V until V SW > 30V
170 175 180 mV
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FB pin input current I FB V FB=5V or 0V -100 100 nAmips
Max duty cycle (5)D MAX98 % Thermal shutdown (5)Hysteresis
=20°C 150
°C Note:
5) Guaranteed by design.
PIN FUNCTIONS
SOIC8-EP Pin #
Name Description
1 SW
Switch Node. Output from the high-side switch. Requires a low-V F Schottky rectifier.
Place the rectifier clo to the SW pins to reduce switching spikes. 2 DIM PWM Dimming Input. Pull this pin below the specified threshold to turn dimming off. Pull
this pin above the specified threshold to turn dimming on. If there is no need for
dimming, connect DIM and EN pins together. 3 EN
Enable Input. Pull this pin below the specified threshold to shutdown the chip. Pull this
pin up above the specified threshold or leave it floating to enable the chip. 4 GND,
Expod
pad
Ground. Connect as clo as possible to the output capacitor. Avoid the high-current
switching paths. Connect expod pad to GND plane for optimal thermal performance.
5 FB Feedback. Input to hysteretic comparators. Connect an external current nsing resistor
in ries with the LEDs to GND. Connects with the feedback voltage; regulated at
+200mV with 25% ripple.
6 NC Not connected
田忌赛马翻译7 VIN Input Supply. Supplies power to all the internal control circuitry, including both bootstrap
regulators and the high-side switch. Place a decoupling capacitor to ground clo to this
pin to minimize switching spikes.
8 BST
Bootstrap. Positive power supply for the internal floating high-side MOSFET driver.
Connect a bypass capacitor between this pin and SW pin.
BLOCK DIAGRAM
EN
FB
GND
SW
BST
Figure 1—Functional Block Diagram
