IGBT Chip in NPT-technology
This chip is ud for: • power module
膨胀螺栓 英文
BSM100GD120DN2 FEATURES:
• 1200V NPT technology 200µm chip • low turn-off loss • short tail current
• positive temperature coefficient • easy paralleling
• integrated gate resistor
Applications: • drives
Chip Type
V CE I Cn Die Size Package Ordering Code SIGC156T120R2C 1200V 100A 12.59 X 12.59 mm 2 sawn on foil Q67041-A4661-A003
MECHANICAL PARAMETER: Raster size 12.59 X 12.59 Emitter pad size 8 x ( 3.98 x 2.38 )
Gate pad size 1.46 x 0.8 Area total / active 158.5 / 132.6
mm 2
Thickness 200 µm Wafer size 150 mm Flat position
90
grd
Max.possible chips per wafer
82 pcs Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1%
Collector metallization 1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond
Al, <500µm Reject Ink Dot Size
∅ 0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
subtotal
MAXIMUM RATINGS : Parameter
grexSymbol Value Unit Collector-emitter voltage, T j =25 °C V CE 1200
V DC collector current, limited by T jmax I C 1 )
A Puld collector current, t p limited by T jmax I c p u l s 300 A Gate emitter voltage
V GE ±20 V Operating junction and storage temperature规律英文
T j , T s t g
-55 ... +150
°C
1 )
depending on thermal properties of asmbly STATIC CHARACTERISTICS (tested on chip), T j =25 °C, unless otherwi specified: Value
Parameter
Symbol Conditions min. typ. max. Unit
Collector-emitter breakdown voltage V (BR)CES V GE =0V , I C =5mA 1200 Collector-emitter saturation voltage V CE(sat) V GE =15V, I C =100A 2.0 2.5 3.0 Gate-emitter threshold voltage V GE(th) I C =4mA , V GE =V CE 4.5 5.5 6.5 V Zero gate voltage collector current I CES V CE =1200V , V GE =0V 600 µA Gate-emitter leakage current I GES V CE =0V , V GE =20V
600 nA Integrated gate resistor
R Gint
5
Ω
ELECTRICAL CHARACTERISTICS (tested at component): Value
Parameter Symbol Conditions min. typ. max. Unit Input capacitance C i s s - 6.5 - Output capacitance
C o s s - 1 - Rever transfer capacitance
C r s s
V C E =25V, V GE =0V, f =1MHz
-
zhouqu0.5
北极光俄语词霸-
nF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load Value
Parameter Symbol Conditions 1) min. typ. max. Unit Turn-on delay time t d(on) - 160 320 Ri time
t r - 80 160 Turn-off delay time t d (o f f ) - 400 520 Fall time
t f
T j =125°C V C C =600V, I C =100A, V GE =+15/-15V, R G =6.8 Ω
-
70
100
ns
1)
CHIP DRAWING:
FURTHER ELECTRICAL CHARACTERISTICS:
少儿英语培训费用
This chip data sheet refers to the
device data sheet BSM100GD120DN2 ECONOPACK3
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Stras 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Rerved.
Attention plea!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
滑铁卢大学专业Terms of delivery and rights to technical change rerved.mba报名考试
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
daegu
Information
For further information on technology, delivery terms and conditions and prices plea contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprentatives world-wide (e address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question plea contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be ud in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cau the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the ur or other persons may be endangered.
