专利名称：SEMICONDUCTOR STRAIN GAUGE 发明人：KOIKE YASUHIRO
申请号：JP7799191
申请日：19910410
公开号：JPH04313276A
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公开日：
whammy
19921105
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wave your arms摘要：PURPOSE:To provide a miconductor strain gauge where a gauge element with a small change in output characteristics due to temperature increa is formed regarding a miconductor strain gauge which is obtained by forming the gauge element with a piezo resistance effect on an Si single-crystal substrate as a high-impurity concentration region. CONSTITUTION:A high-impurity concentration region (low specific resistance) is provided at (high specific resistance) Si single-crystal substrates 2 and 7 which contain an n-type impurity at low concentration, thus forming gauge elements 3 and 8. Namely, the gauge elements 3 and 8 are formed according to a difference in specific resistance instead of pn junction, thus eliminating poor influence to output characteristics at a high-temperature region. Also, even if a high-impurity concentration region is formed at the Si single-crystal substrate which does not contain impurities at all, miconductor strain gauges 1 and 6 with less change in output characteristics due to temperature increa are obtained.
beacon申请人：TOYOTA AUTOM LOOM WORKS LTD
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