Lecture 7:
IGBT Ι
Oh, Kwang-Hoon, Ph. D.
futanaria
Contents •Introduction •IGBT vs MOSFET
•IGBT Structure •IGBT Characteristics -Forward Blocking -Forward Conduction -IGBT Operation
-Latch-Up
-Latch-Up suppression
-Switching Characteristics
•Lifetime Control
•High Temperature Characteristics
•Short Circuit Ruggedness
•SOA
•NPT IGBTs?
•IGBT Design/ Process
目录
简介
IGBT结构
IGBT特性
正向阻断
正向导通variety
What is IGBT?
thunder•IGBT: I nsulated G ate B ipolar T ransistor (BJT + MOSFET)
Equivalent circuit symbol中文英文转换器
qyf
IGBT
epidemicLow <12kHz Medium <40kHz High<150kHz
Difference IGBT vs. MOSFET:
挣脱读音是什么
•smaller chip size -> lower price
•softer switching, lower EMI
会计学专业就业前景
•temperature stable –
no significant loss increa
会计证取消@ increasing Ta / Tj
公共事业管理考研•not suitable for ultra
high frequencies