V RSM V RRM
Type
V V 1200
kela1200
DSEI 2x 101-12Akus
Symbol Test Conditions Maximum Ratings (per diode)
I F(RMS)T VJ = T VJM
130A I F(AV)M x T C
= 50°C; rectangular, d = 0.5
91
救世主英文
A I FRM t P < 10 m s; rep. rating, pul width limited by T VJM TBD A I FSM
T VJ = 45°C;
t = 10 ms (50 Hz), sine 900A t = 8.3 ms (60 Hz), sine
970A T VJ = 150°C;t = 10 ms (50 Hz), sine
810A t = 8.3 ms (60 Hz), sine
870A I 2t
T VJ = 45°C
t = 10 ms (50 Hz), sine 4100A 2s t = 8.3 ms (60 Hz), sine
4000A 2s T VJ = 150°C;t = 10 ms (50 Hz), sine
3300A 2s t = 8.3 ms (60 Hz), sine 3200A 2s T VJ
-40...+150
°C T VJM 150°C T stg -40...+150
°C P tot T C = 25°C 250W V ISOL 50/60 Hz, RMS 2500V~I ISOL £ 1 mA
M d Mounting torque
1.5/13Nm/lb.in.Terminal connection torque (M4)
1.5/13
Nm/lb.in.gist
Weight 30
g
Symbol Test Conditions Characteristic Values (per diode)
typ.max.
I R
T VJ = 25°C V R = V RRM
3
mA T VJ = 25°C V R = 0.8 • V RRM 1.5mA T VJ = 125°C V R = 0.8 • V RRM 15mA V F I F = 100 A;
T VJ =150°C 1.61V T VJ =25°C
1.87V V T0For power-loss calculations only
1.01V r T 6.1m W R thJC 0.5
K/W R thCH 0.05true colors
K/W t rr I F = 1 A; -di/dt = 400 A/µs; V R = 30 V; T VJ = 25°C 4060ns I RMfrustrating
attachtoV R = 100 V;I F = 75 A; -di F /dt = 200 A/µs 24
30
A
L £ 0.05 mH; T VJ = 100°C
合肥环球雅思
DSEI 2x 101
V RRM =1200 V I FAVM =2x 91 A t rr =40 ns
x I FAVM rating includes rever blocking loss at T VJM , V R = 0.8 V RRM , duty cycle d = 0.5Data according to IEC 60747
IXYS rerves the right to change limits, test conditions and dimensions
Features
英文词典q International standard package q miniBLOC (ISOTOP compatible)q Isolation voltage 2500 V~
q matched diodes f. parallel operation q Planar passivated chips q two independent diodes q Very short recovery time
q Extremely low switching loss q Low I RM -values
q
Soft recovery behaviour
Fast Recovery
Epitaxial Diode (FRED)
morayminiBLOC, SOT-227 B
E72873
008
Fig. 7Transient thermal impedance junction to ca at various duty cycles
