专利名称：INTEGRATED CIRCUIT DEVICEmistakenly
发明人：Joon-gon LEE,Ryuji TOMITA,Do-sun LEE,Chul-
sung KIM,Do-hyun LEE
dostyle
申请号：US15679444
申请日：20170817
transporter公开号：US20180261540A1
struggle公开日：
regularly
gomei20180913
专利内容由知识产权出版社提供
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摘要：An integrated circuit device includes at least one fin-type active region, a gate line on the at least one fin-type active region, and a source/drain region on the at least one fin-type active region at at least one side of the gate line. A first conductive plug is
connected to the source/drain region and includes cobalt. A cond conductive plug is connected to the gate line and spaced apart from the first conductive plug. A third conductive plug is connected to each of the first conductive plug and the cond conductive plug. The third conductive plug electrically connects the first conductive plug and the cond conductive plug.
申请人：SAMSUNG ELECTRONICS CO., LTD.
地址：Suwon-si KR
国籍：KR无论如何>查四级成绩
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