Modified sourcedrain re-oxidation method and syst

更新时间:2023-05-30 10:03:18 阅读: 评论:0

ipp专利名称:Modified source/drain re-oxidation method
and system
发明人:Paul J. Rudeck,Francis Benistant,Kelly Hurley
国庆诗歌申请号:US10072015
restaurant申请日:20020207
公开号:US07271435B2
everyday english>腿短穿什么裤子公开日:
university of alberta
20070918
专利内容由知识产权出版社提供
专利附图:
摘要:Methods and devices are disclod utilizing a phosphorous-doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation
process and greater control of the performance characteristics of miconductor devices
politics哒哒英语怎么样such as flash memory. For flash memory, greater control is gained over programming rates, era rates, data retention and lf-aligned source resistance.
申请人:Paul J. Rudeck,Francis Benistant,Kelly Hurley
地址:Boi ID US,Singapore SG,Boi ID US
国籍:US,SG,US
桂林环球雅思代理机构:Dinsmore & Shohl LLP
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