专利名称：ANODIC OXIDATION METHOD 发明人：NOZAWA HIROSHI
申请号：JP14513475
申请日：19751208big cock>早上好英文
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公开号：JPS5269572A
公开日：
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19770609
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国旗下讲话 爱国cult movie摘要：PURPOSE:To make ossible lective anodic oxidation for P-type Si film on N-type Si substrate, Si on insulator, etc., which has hitherto been difficult, by u of corrosion-resisting electric conductor for mask and electrode and then by exidizing miconductor film.
申请人：TOKYO SHIBAURA ELECTRIC CO雅思参考书
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