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专利名称：Oxidation process to improve polysilicon
my summer holiday英语作文sidewall roughness
发明人：Ming-Ching Chang
申请号：US10251327
申请日：20020920artemia
you jump i jump公开号：US06794313B1
超译百人一首歌之恋hot potato公开日：
20040921培训摄影学习
专利内容由知识产权出版社提供
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专利附图：
sw是什么摘要：A new step is provided for the creation of polysilicon gate electrode structures.
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A layer of polysilicon is deposited over the surface of a layer of miconductor material,the layer of polysilicon is etched using a layer of hardmask material for this purpo. The
etch of the layer of polysilicon is performed using a dual power source plasma system. During the etching of the layer of polysilicon, a step of inert oxidation is inrted. This step forms a layer of passivation over the sidewalls of the etched layer of polysilicon. The step of inert oxidation is an oxygen-bad plasma exposure.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
代理机构：Haynes and Boone, LLP
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