专利名称：Vertical transistor and a miconductor
integrated circuit apparatus having the same
发明人：Masahiro Sakuragi,Masahiko Sonoda
申请号：US11116357
lete申请日：20050428
公开号：US07521747B2环球雅思网校>kohinoor
公开日：
墓碑吞噬者
20090421
专利内容由知识产权出版社提供
专利附图：
摘要：AMOS transistor compris: a first conduction type region; a cond conduction type drain re
gion formed on the outermost layer portion of the first conduction type region; a cond conduction type source region formed on the outermost layer portion
adaptec
go over平台是什么意思of the first conduction type region with a channel region provided between the cond conduction type drain region and the cond conduction type source region; agate electrode formed on the channel region; a cond conduction type ba region formed inside of the cond conduction type drain region in plan elevation; a plurality of first conduction type emitter regions formed in the cond conduction type ba region on the outermost layer portion thereof at spatial intervals in a predetermined direction; and a drain contact connected to, as lying astride, adjacent two first conduction type emitter regions and that portion of the cond conduction type drain region between the adjacent two first conduction type emitter regions.
申请人：Masahiro Sakuragi,Masahiko Sonoda
地址：Kyoto JP,Kyoto JP
国籍：JP,JP
代理机构：Rabin & Berdo, PCh m p
treasured
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