——电材专业英语课文翻译
Semiconductor Materials
厉害日文
• 1.1 Energy Bands and Carrier Concentration
• 1.1.1 Semiconductor Materials
• Solid-state materials can be grouped into three class—insulators(绝缘体）, miconductors, and conductors. Figure 1-1 shows the electrical conductivities δ (and the corresponding resistivities ρ≡1/δ)associated with(相关） some important materials in each of three class. Insulators such as fud（熔融） quartz and glass have very low conductivities, in the order of 1E-18 to 1E-8 S/cm;
固态材料可分为三种：绝缘体、半导体和导体。图1－1 给出了在三种材料中一些重要材料相关的电阻值（相应电导率ρ≡1/δ)。绝缘体如熔融石英和玻璃具有很低电导率，在10-18 到10-8 S/cm;
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and conductors such as aluminum and silver have high conductivities, typically from 104 to 106 S/cm. Semiconductors have conductivities between tho of insulators and tho of conductors. The conductivity of a miconductor is generally nsitive to temperature, illumination（照射） , magnetic field, and minute amount of impurity atoms. This nsitivity in conductivity makes the miconductor one of the most important materials for electronic applications.
导体如铝和银有高的电导率，典型值从104到106S/cm;而半导体具有的电导率介乎于两者之间。半导体的电导率一般对温度、光照、磁场和小的杂质原子非常敏感。在电导率上的敏感变化使得半导体材料称为在电学应用上为最重要的材料。
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The study of miconductor materials began in early nineteenth century. Over the years many miconductors have been investigated. Table 1 show a portion（部分) of the periodic(周期） table related to miconductors. The element miconductors, tho compod of single species of atoms, such as silicon (Si) and germanium (Ge), can be found in Column Ⅳ. However, numerous compound miconductors are compod of tw
o or more elements. For example, gallium arnide (GaAs) is a Ⅲ-Ⅴ compound that is a combination（合成） of gallium (Ga) from Column Ⅲ and arnic (As) from Column Ⅴ越狱经典台词.
早在19世纪人们已经开始研究半导体材料。多年来人们研究了很多半导体材料。表1给出了与半导体相关的周期表中的部分元素。由单种元素组成的单质半导体如硅和锗在第Ⅳ族。而大量的化合物半导体有两个甚至更多元素组成。如GaAs是Ⅲ-Ⅴ化合物是由Ⅲ族的Ga和Ⅴ族的As化合而得。
Prior to the invention of the bipolar transistor蚕食是什么意思（双极二极管） in 1947,miconductors were ud only as two-terminal四级作文万能模板（电极） devices, such as rectifiers（整流器） and photodiodes（光敏二极管）. In the early 1950s, germanium was the major miconductor material.
在1947年双极晶体管发明之前，半导体仅用作双极型器件如整流器和光敏二极管。早在20世纪50年代，锗是主要的半导体材料。
However, germanium proved unsuitable in many applications becau germanium device
s exhibited high leakage currents（漏电流） at only moderately elevated temperatures. In addition, germanium oxide is water soluble and unsuited for device fabrication. Since the early 1960s silicon has become a practical substitute（实际取代） and has now virtually supplanted（事实上替代） germanium as a material for miconductor fabrication(结构）
然而锗不太适合在很多方面应用因为温度适当提高后锗器件会产生高的漏电流。另外，锗的氧化物是水溶性的不适合器件制作。所以20世纪60年代实际上锗被硅所取代，事实上硅替代锗成为半导体制作的材料之一。cretary是什么意思
The main reasons we now u silicon are that silicon devices exhibit much lower leakage currents, and high-quality silicon dioxide can be grown thermally. There is also an economic consideration. Device grade silicon costs much less than any other miconductor material. silicon in the form of silica and silicates（硅酸盐） compris 25% of the Earth’s crust（地表）, and silicon is cond only to oxygen in abundance（分布）. At prent, silicon is one of the most studied elements in the periodic table; and silicon technology is by far the most advanced among all miconductor technologies
我们用硅材料的主要原因有硅器件存在非常低的漏电流且能够通过热法生长出高质量的二氧化硅。器件级硅成本远少于其它半导体材料。硅以硅石和硅酸盐形式存在并占地球地表层的25％，而且硅元素在分布中排在氧之后的第二位。当今硅是在元素周期表中研究最多的元素；硅技术是在所有半导体技术中最先进的。
Many of the compound miconductors have electrical and optical properties that are abnt（缺少）turtles in silicon. The miconductors, especially gallium arnide (GaAs), are u mainly for microwave and photonic applications. Although we do not know as much about the technology of compound miconductor as we do about that of silicon, compound miconductor technology has advanced partly becau of the advances in silicon technology. In this book we are concerned mainly with device physics and processing technology of silicon and gallium arnide.
有很多化合物半导体具有硅所缺少的电光性能。这些半导体特别是GaAs主要用作微波和光学应用。虽然我们了解化合物半导体技术不如硅材料的多，但化合物半导体技术由于硅技术的发展而发展。在本书中我们主要介绍硅和砷化镓的器件物理和制备技术。
Crystal Structure
The miconductor materials we will study are single crystals, that is, the atoms are arranged in a three-dimensional periodic fashion. The periodic arrangement（排布） of atoms in a crystal is called a latticelocate（晶格）. In a crystal, an atom never stray（偏离） far from a single, fixed position. The thermal vibrations associated with the atom are centered about this position. For a given miconductor, there is a unit cell（晶胞） that is reprentative of the entire lattice; by repeating the unit cell throughout the crystal, one can generate the entire lattice.
我们研究的半导体材料是单晶，也就是说，原子是按照三维周期形式排列。在晶体中原子的周期排列称为晶格。在晶体里，一个原子从不远离它确定位置。与原子相关的热运动也是围绕在其位置附近。对于给定的半导体，存在代表整个晶格的晶胞，通过在晶体中重复晶胞组成晶格。
