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Product Guide
Consumer Memory
1. CONSUMER MEMORY ORDERING INFORMATION
3. Product
4. Density & Refresh
5. Organization
6. Bank
7. Interface ( V DD , V DDQ )
9. Package Type
8. Revision
1. SAMSUNG Memory : K
2. DRAM : 4Revision
Bank
Organization
Density & Refresh Product
DRAM SAMSUNG Memory Interface (V DD , V DDQ )
Package Type
Temperature & Power
K 4 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 9 10 11
Speed
10. Temperature & Power
S :SDRAM
H :DDR SDRAM T :DDR2 SDRAM B
:DDR3 SDRAM
64:64Mb, 4K/64ms 28:128Mb, 4K/64ms 56:256Mb, 8K/64ms 51:512Mb, 8K/64ms 1G :1Gb, 8K/64ms 2G :2Gb, 8K/64ms
04:x408:x816:x1632:x3231:x32 (2CS)
2:2 Banks 3:4 Banks 4
:8 Banks
2:LVTTL (3.3V, 3.3V)8:SSTL_2 (2.5V, 2.5V)Q :SSTL_18 (1.8V, 1.8V)6开天辟地背单词
:SSTL_15 (1.5V, 1.5V)
M :1st Gen.H :9th Gen.A :2nd Gen.I :10th Gen.B
:
3rd Gen.J :11th Gen.C :4th Gen.K :12th Gen.D :5th Gen.L :13th Gen.E :6th Gen.N :14th Gen.F :7th Gen.O :15th Gen.G
:8th Gen.
S
:19th Gen.
U :
TSOPII (Lead-free)
100TQFP(Lead-free) only for 128Mb GDDR
Z
:FBGA (Lead-free)
V :144FBGA (Lead-free) only for 128Mb GDDR L :TSOPII (Lead-free & Halogen-free)H :FBGA (Lead-free & Halogen-free)
F :FBGA(Lead-free & Halogen-free) for 64Mb DDR, 128Mb GDDR M :FBGA DDP (Lead-free & Halogen-free)B
:FBGA FLIP-CHIP (Lead-free & Halogen-free)
C :Commercial Temp. & Normal Power L :Commercial Temp. & Low Power I :Industrial Temp. & Normal Power P :Industrial Temp. & Low Power D
:Industrial Temp. & Super Low Power
11. Speed
Revision
Bank
Organization
Density & Refresh Product
DRAM SAMSUNG Memory Interface (V DD , V DDQ )
Package Type
Temperature & Power
K 4 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 9 10 11
Speed
75:7.5ns, PC133 (133MHz CL=3)60:6.0ns (166MHz CL=3)50:5.0ns (200MHz CL=3)40:4.0ns (250MHz CL=3)
B0:DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)B3:DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)CC :DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)E6:DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)E7:DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)F7:DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6)F8:DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)H9:DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)K0:DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)MA :DDR3-1866 (933MHz @ CL=13, tRCD=13, tRP=13)NB :DDR3-2133 (1066MHz @ CL=14, tRCD=14, tRP=14)
2. Commercial Temperature Consumer DRAM Component Product Guide
2.1 SDRAM
2.2 DDR SDRAM
NOTE : 1 . V DD /V DDQ SPEC for 256/512Mb DDR
Density Bank Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)Package Avail.128Mb O-die
4Banks
K4S280832O LC(L)75
16M x 8LVTTL
4K/64ms
3.3±0.3V
54pin TSOP(II)
Now
K4S281632O LC(L)50/C(L)60/C(L)758M x 16256Mb N-die
4Banks
K4S560432N
LC(L)7564M x 4LVTTL
8K/64ms
3.3±0.3V
54pin TSOP(II)
Now
K4S560832N LC(L)7532M x 8K4S561632N
awardingLC(L)60/C(L)75
16M x 16
Density Bank Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)Package Avail.64Mb Q-die 4Banks K4H641638Q LC(L)CC 4M x 16SSTL_24K/64m 2.5±0.2V 66pinTSOPII Now 128Mb O-die
wuding4Banks阿摩尼亚
K4H281638O LC(L)CC/C(L)B38M x 16SSTL_2
4K/64m
排山倒海英文版2.5±0.2V *1
66pinTSOPII
Now
256Mb N-die
4Banks
K4H560438N
LC(L)B3/C(L)B0 64M x 4SSTL_2
8K/64m
2.5±0.2V *1
66pinTSOPII
shutNow
K4H560838N LC(L)CC/C(L)B3 32M x 8K4H561638N LC(L)CC/C(L)B3 16M x 16512Mb J-die 4Banks K4H510438J
LC(L)B3/C(L)B0128M x 4
SSTL_2
8K/64m
2.5±0.2V *1
66pinTSOPII Now
BC(L)CC/C(L)B360ball FBGA
K4H510838J LC(L)CC/C(L)B3 64M x 8
66pinTSOPII BC(L)CC/C(L)B360ball FBGA K4H511638J
LC(L)CC/C(L)B3 32M x 16
66pinTSOPII BC(L)CC/C(L)B3
60ball FBGA
DDR400
DDR333/266V DD /V DDQ
2.6V ± 0.1V
2.5V ± 0.2V
2.3 DDR2 SDRAM
2.4 DDR3 SDRAM
NOTE : 1. DDR3 x8 1866/2133Mbps are ES now
2.5 DDR3+ SDRAM
NOTE : For more details about product specifications or technical files, plea contact us ""
Density Banks Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)Package Avail.128Mb O-die 4Banks K4T28163QO HCF8/E7/F7/E68M x 16SSTL_184K/64m 1.8V±0.1V 84ball FBGA Now 256Mb N-die
4Banks
K4T56163QN HCF8/E7/F7/E616M x 16SSTL_18
8K/64m
1.8V±0.1V
84ball FBGA Now
512Mb I-die
4Banks
K4T51043QI
minke whaleHC(L)E7/F7/E6128M x 4SSTL_18
8K/64m
1.8V±0.1V 60ball FBGA Now
K4T51083QI HC(L)E7/F7/E664M x 8K4T51163QI
HC(L)F8/E7/F7/E632M x 1684ball FBGA
1Gb E-die
8Banks
K4T1G084QE HC(L)F8/E7/F7/E6128M x 8SSTL_18
8K/64m
1.8V±0.1V
60ball FBGA Now K4T1G164QE HC(L)F8/E7/F7/E664M x 1684ball FBGA 1Gb F-die
8Banks K4T1G084QF BC(L)F8/E7/F7/E6128M x 8SSTL_188K/64m 1.8V±0.1V 60ball FBGA Now
K4T1G164QF奥运英语
BC(L)F8/E7/F7/E6
64M x 16
84ball FBGA
Density Banks Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)PKG Avail.1Gb E-die
8Banks
K4B1G0846E HC(L)F7/F8/H9/K0128M x 8SSTL_15
8K/64m
1.5V±0.075V
motion是什么意思
78ball FBGA Now
K4B1G1646E HC(L)F7/F8/H9/K064M x 1696ball FBGA 1Gb G-die 8Banks K4B1G0846G BC(L)F8/H9/K0/MA/NB 1128M x 8SSTL_158K/64m 1.5V±0.075V 78ball FBGA Now
K4B1G1646G BC(L)F8/H9/K0/MA/NB 64M x 1696ball FBGA 2Gb B-die 8Banks K4B2G0846B HC(L)F7/F8/H9/K0256M x 8SSTL_158K/64m 1.5V±0.075V 78ball FBGA Now
K4B2G1646B HC(L)F7/F8/H9/K0128M x 1696ball FBGA 2Gb C-die 8Banks K4B2G0846C HC(L)F8/H9/K0/MA/NB 1256M x 8SSTL_158K/64m 1.5V±0.075V 78ball FBGA Now
K4B2G1646C
HC(L)F8/H9/K0/MA/NB
128M x 16
amorz96ball FBGA
Density Banks Part Number Package & Power, Temp. (-C/-L) & Speed Org.Interface Refresh Power (V)PKG Avail.1Gb E-die 8Banks K4B1G1646E HQH964M x 16SSTL_158K/64m 1.5V±0.075V 96ball FBGA Now 1Gb G-die 8Banks K4B1G1646G BQH964M x 16SSTL_158K/64m 1.5V±0.075V 96ball FBGA Now 2Gb C-die
8Banks
K4B2G1646C
HQH9
128M x 16
SSTL_15
8K/64m
1.5V±0.075V
96ball FBGA
Now
