Waferlevel method for direct bumping on copper pad

更新时间:2023-05-25 19:56:11 阅读: 评论:0

专利名称:Waferlevel method for direct bumping on
copper pads in integrated circuits
发明人:Christo P. Bojkov,Phillip Coffman,Patricia B.
Smith
申请号:US10086117
申请日:20020226
treasure是什么意思公开号:US20030116845A1
shit happens公开日:
demonstrate
20030626
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摘要:A structure and a fabrication method for metallurgical connections between solder bumps and contact pads positioned on integrated circuits (IC) having copper
aquaman
interconnecting metallization protected by an overcoat. The structure compris a portion of the copper metallization expod by a window in the overcoat, where the expod copper has a chemically and plasma cleaned surface. A copper layer is directly positioned on the clean copper metallization, and patterned; the resulting metal structure has an electrical (and thermal) conductivity about equal to the conductivity of pure copper. The copper layer overlaps the perimeter of the overcoat window and a copper stud is positioned on said copper layer. Finally, one of the solder bumps is bonded to the copper stud.
opengl是什么申请人:BOJKOV CHRISTO P.,COFFMAN PHILLIP,SMITH PATRICIA B.
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