专利名称：Epitaxial diode for a high rever voltage 发明人：Chadda, Madan Mohan
bns申请号：EP84109176
ielts怎么读申请日：19840802
consulate>赫尔辛基英文公开号：EP0135733A3
公开日：
19851016
专利内容由知识产权出版社提供
摘要：it is a epitaxialdiode with a substrate and a high resistance of a leitungstyps middle and an outer zone of the other leitungstyps and rekombinationszentren to reduce tr\u00e4gerlebensdauer described in the high sperrspannungsbelastbarkeit this is achievedthat between the substrate and a first intermediate region with珠海的大学
leafage>isao\u00fcbereinstimmendem leitungstyp middle and lower than that of the substrate dotierungskonzentration and between the middle and outer zone a cond intermediate region of the other leitungstyps with lower dotierungskonzentration than that of the outer zone is arranged and provided rekombinationszentren schwermetallionen.
申请人：SEMIKRON, GESELLSCHAFT FÜR GLEICHRICHTERBAU UND ELEKTRONIK高考落榜的出路
M.B.H.
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