ZY70N65
N-CHANNEL 65V - 70A TO-220 POWER MOSFET
Id
Rdson
TYPE Bvdss
ZY70N65 65V 10mΩ 70A
Typical Rdson = 8.5mΩ
Exceptional dv/dt Capability
100% Avalanche Tested
Application Oriented
Characterization
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DESCRIPTION
This Power Mosfet ries realized with SZY Corp.
DMOS technology trench process has specifically
signed to minimize input capacitance and
gate charge. It is therefore suitable as primary switch
in advanced high-efficiency isolated DC-DC
Converters for Telecom and Computer application.
It is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
vague
HIGH-EFFICIENCY DC-DC CONVERTERS
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UPS
AUTOMOTIVE ENVIRONMENT
topicntence
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value
Unit Vds Drain-Source Voltage ( Vgs=0 )65 V
Vdgr Drain-gate Voltage (R GS = 20 KΩ)65 V
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Vgs Gate- source Voltage±20V V
Id (a) Drain Current (continuous) at T C = 25 ℃70 A
Id Drain Current (continuous) at T C = 100 ℃42 A
IDM (b) Drain Current (puld)240 A
Ptot Total Dissipation at T C = 25 ℃110 W
Derating
Factor 0.7 W/℃
dv / dt (1) Peak Diode Recovery voltage slope 4 V/ns
Eas (2) Single Pul Avalanche Energy360 mj
Tstg Storage
Temperature
Tj Max. Operating Junction Temperature
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(a) Current limited by package (1) ISD ≤ 60A, di/dt ≤ 400A/us, VDD ≤24V, Tj ≤ T JMAX.
(b) P ul width limited by safe operating area (2) Starting Tj =25 , ID =30A, VDD =30V
℃
THERMAL DATA
Rthj-ca Thermal Resistance Junction-ca Max 1.36 / W
℃
Rthj-amb Thermal Resistance Junction-ambient Max 63 / W
℃
Ti Maximum Lead Temperature For Soldering Purpo Typ 300 ℃
ELECTRICAL CHARACTERISTICS(T ca = 25 ℃ unless otherwi specified)
OFF
Symbol Parameter Test Conditions Min Typ Max Unit
Bvdss Drain-source
Breakdown Voltage
ID = 250 uA VGS = 0 65 V
Idss Zero Gate Voltage
Drain Current (VGS = 0) V DS = Max Rating
V DS = Max Rating T C = 125 ℃
1
10
uA
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Igss Current (VDS = 0) V GS = 20V
±100nA ON
Symbol Parameter Test Conditions Min Typ Max Unit
VGS(th) Gate Threshold Voltage VDS =VGS ID =250uA 2 3 4 V
RDS(on) Static Drain-source On Resistance VGS = 10V ID=30A 8.5 10 mΩ
DYNAMIC
Symbol Parameter
Test Conditions
Min Typ Max Unit Gfs
Forward Tran conductance
VDS = 15V ID=30A
20
S
Ciss Input Capacitance 1810 PF
Coss Output Capacitance 360 PF
Crss Rever Transfer Capacitance
V DS = 25V, f = 1 MHz, V GS=0
125 PF
ELECTRICAL CHARACTERISTICS
SWITCHING ON
Symbol Parameter
Test Conditions
Min Typ Max Unit
td ( on )
Turn-on Delay Time
16
ns
tr Ri Time VDD=30V , ID=30A , Rg=4.7Ω VGS=10V (Resistive Load, Figure 3)
108 ns Qg
Total Gate Charge
49
66
nc
Qgs Gate-Source Charge 18 nc Qgd Gate-Drain Charge
prize
VDD = 48V ID = 60 A VGS= 10V 14 nc
SWITCHING OFF
Symbol Parameter
Test Conditions
Min Typ Max Unit td (off)
Turn-off Delay Time
43 ns tf Fall Time
VDD=30V , ID=30A , Rg=4.7Ω VGS=10V (Resistive Load, Figure 3)
20
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min Typ Max
Unit
ISD Source-drain Current 60 A ISDM (1) Source-drain Current (puld)
240 A VSD (a) Forward On Voltage ISD = 60 A VGS = 0 1.3 V trr Rever Recovery Time 73 ns Qrr Rever Recovery Charge
182
nc
IRRM
Rever Recovery Current
ISD = 60 A VDD = 25 V di/dt = 100A/us Tj= 150 ℃ (e test circuit, Figure 5)
5 A
(1 ) Pul width limited by safe operating area (a) Puld: Pul duration = 300 s, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
Output Characteristic Transfer Characteristics
Source-drain diode forward characteristics Static Drain-source On Resistanc
Gate Charge vs Gate-source Voltag Capacitance Variation
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
