This is information on a product in full production.
August 2014
DocID024972 Rev 41/13
STP15810
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Features
外教推荐信
•100% avalanche tested
•Ultra low on-resistance
Applications
•Switching applications
Description
This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code
V DS R DS(on)max I D P TOT STP15810
100 V
0.0042 Ω
110 A
250 W
Table 1. Device summary
Order code Marking Package Packaging STP15810
15810
TO-220
Tube
thd
Contents STP15810
Contents
1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13DocID024972 Rev 4
DocID024972 Rev 43/13
bagman>qashqaiSTP15810Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value Unit V DS Drain-source voltage 100V V GS Gate- source voltage
±20V I D Drain current (continuous) at T C = 25 °C 110A I D Drain current (continuous) at T C = 100 °C 110A I DM (1)1.Pul width is limited by safe operating area Drain current (puld) T C = 25 °C 440A P TOT Total dissipation at T C = 25 °C 250W E AS (2)2.Starting T j =25 °C, I D =30 A, V DD =50 V
Single pul avalanche energy 495mJ T J Operating junction temperature -55 to 175
°C T stg
Storage temperature
°C
好听的英语歌曲
Table 3. Thermal data
Symbol Parameter
Value Unit R thj-ca Thermal resistance junction-ca max 0.6°C/W R thj-amb
Thermal resistance junction-ambient max
托福课程62.5
°C/W
Electrical characteristics STP15810
4/13DocID024972 Rev 4
2 Electrical characteristics
(T C = 25 °C unless otherwi specified)
Table 4. On /off states
Symbol Parameter Test conditions
Min.Typ.
Max.
Unit V (BR)DSS
Drain-source
breakdown voltage V GS = 0, I D = 250 µA 100
V I DSS
Zero gate voltage drain current V GS = 0, V DS = 100 V 1µA V GS = 0,
V DS = 100 V, T C =125 °C 100µA I GSS Gate-body leakage current
V DS = 0, V GS = +20 V
100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 µA 2.5 4.5
jebel aliV R DS(on)
Static drain-source on-
resistance
V GS = 10 V, I D = 55 A泰语我爱你怎么说
0.00360.0042Ω
Table 5. Dynamic
Symbol Parameter Test conditions
Min.Typ.Max.Unit C iss Input capacitance V DS = 55 V, f = 1 MHz, V GS = 0
-8115-pF C oss Output capacitance -1510-pF C rss Rever transfer capacitance -67-pF Q g Total gate charge V DD = 55 V, I D = 90 A,V GS = 10 V (e Figure 14)
-117-nC Q gs Gate-source charge -47-nC Q gd
Gate-drain charge
-26
-nC
Table 6. Switching times
Symbol Parameter Test conditions
Min.Typ.Max.Unit t d(on)Turn-on delay time V DD = 50 V, I D = 55 A, R G = 4.7 Ω, V GS = 10 V (e Figure 13)
-33-ns t r Ri time
beachhou-57-ns t d(off)Turn-off delay time -72-ns t f
Fall time
-33
-ns
DocID024972 Rev 45/13
STP15810
Electrical characteristics
Table 7. Source drain diode
Symbol Parameter
Test conditions
Min.Typ.
Max.Unit I SD Source-drain current -110A I SDM (1)1.Pul width limited by safe operating area Source-drain current (puld)-440A V SD (2)2.Puld: pul duration = 300 µs, duty cycle 1.5%.
Forward on voltage I SD = 110 A, V GS = 0
- 1.2
V t rr Rever recovery time I SD = 110 A, di/dt = 100 A/µs V DD = 80 V, T J =150 °C (e Figure 15)
-70ns Q rr Rever recovery charge -165nC I RRM
Rever recovery current
国庆诗歌- 4.7A
