tinami专利名称：INTEGRATED CIRCUIT DEVICE WITH
FARADAY SHIELD
发明人：Chiew Nyuk Ho,Arjun Kumar
Kantimahanti,Venkatesh A/L Madhaven,Seok
Man Yun,Saw Li Lee,Thart Liang Ong
申请号：US16504121
申请日：20190705
公开号：US20200013880A1
nacos>英语小品公开日：
gossip girl 第四季
20200109
boolean专利内容由知识产权出版社提供烦劳
专利附图：
摘要：An integrated circuit device that includes a substrate as a ba of the integrated
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circuit device, a miconductor layer dispod on top of the substrate, an isolation layer dispod on top of the miconductor layer, a plurality of metals dispod above the isolation layer, a transistor including a source and drain region positioned in the miconductor layer, and a gate electrode connected to the source and drain region and positioned in the isolation layer, wherein the source and drain region, and gate electrode are respectively connected to the metals by electrical contacts, and a Faraday shield positioned laterally between the gate electrode and the drain region in the isolation layer. The Faraday shield is connected to one of the metals through at least one conductive interconnect produced by a damascene process such that the interconnect forms a continuous connection to the metal from the Faraday shield.
申请人：Silterra Malaysia Sdn. Bhd.
吉卜赛地址：Kulim MY网络营销培训
国籍：MY
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