The DTF3415 is the P-Channel logic enhancement
⏹ DESCRIPTION
mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to
minimize on-state resistance. The devices are particularly suited for low voltage application, and
low in-line power loss are needed in a very small outline surface mount package.
⏹ FEATUREmenu是什么意思
◆ -20V/-4.0A, R DS(ON)=44m Ω (typ.)@VGS=-4.5 V ◆ -20V/-4.0A, R DS(ON)=52m Ω (typ.)@VGS=-2.5V ◆ -20V/-2.5A, R DS(ON)=65m Ω (typ.)@VGS=-1.8V ◆ Super high design for extremely low R DS(ON)
◆ Exceptional on-resistance and Maximum DC current capability
◆ Full RoHS compliance
◆ SOT23 package design
iptv是什么⏹ APPLICATIONS
◆ Power Management ◆ Portable Equipment ◆ DC/DC Converter ◆ Load Switch ◆ DSC ◆ LCD Display inverter
⏹ PIN CONFIGURATION
U n i v
e r C h i p S e m c o n d u c t o r
-
20V P-Channel Enhancement Mode MOSFET ◆
ESD Protected G
D
S
P Channel
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⏹ PART NUMBER INFORMATION
⏹ ORDERING INFROMATION
※ Year Code : 0~9far high
※ Week Code : A~Z(1-26); a~z(27~52) ※ G : Green Product. This product is RoHS compliant.
⏹
ABSOLUTE MAXIMUM RATINGS ( T A = 25℃ Unless otherwi noted )performance a
Note: Absolute maximum ratings are tho values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress rating only and functional device operation is not implied
e r C h i S u c t o C i a l
ELECTRICAL CHARACTERISTICS (T A =25℃ Unless otherwi noted)
Note: 1. Pul test: pul width<=300uS, duty cycle<=2% 2.Static parameters are bad on package level with recommended wire bonding
S e C o
TYPICAL CHARACTERISTICS (25℃ Unless Note)
C
o n f
e n
t i
a l
Output Characteristics
0 1 2 3 4 5
00
10
2030
40-I D (A )
-VDS(V)
VGS=-1.5V
-1.8V
-2.5V -4.5V
-
8V
2 3 4 5 6 7 8 9
20
4060
80Drain-Source On Resistance
brooke-VGS(V)
R D S O N (m O h m )
25C
125C
-ID(A)
R D S O N (m O h m )
20
406080
2 4 6 8 10 12
Drain-Source On Resistance
VGS=-4.5V
VGS=-2.5V VGS=-1.8V 0 0.5 1 1.5 2 2.5 3
2 4 6 8
Transfer Characteristics
-VGS(V)
-I D (A )
1012Gate Charge
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0 2 4 6 8 10 12
1234 0
5
6
-V G S (V )
Qg(nC)
-I D (A )
1.2
0.8
1.6
Tj-Junction Temperature
125C
25C
TYPICAL CHARACTERISTICS (cont inuous )
法语考试
Source Drain Diode Forward
Capacitance
-I s -S o u r c e C u r r e n t (A )
0 0.3 0.6 0.9 1.2 1.5 1.8
downsyndrome
1.0
0.1
10
-VSD-Source Drain Voltage(V)
C (p F )
150
300
450 600
750
9000 10 20-VDS-Drain Source Voltage(V)
Power Dissipation @ Tj Drain Current @ Tj
P o w e r D i s s i p a t i o n (W )
Tj-Junction Temperature
Tj-Junction Temperature
0 25 50 75 100 125 150
0 25 50 75 100 125 150
0.91.8
0.30.61.21.5 0
D r a i n C u r r e n t (A )
2.44.80.81.6
3.2
4.0
Thermal Transient I mpedance
0.001
0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
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10
100
1000
N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t
a n c e
In Descending order
D=0.5, 0.3, 0.1,0.05,0.02,0.01Single Pul
125C
25C
Ciss
Coss
Crss
