专利名称：Diffusion break forming after source/drain
forming and related IC structure
发明人：George R. Mulfinger,Jin Z. Wallner
申请号：US15397978
申请日：20170104
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公开号：US09917103B1
公开日：
little something>阳极
tensioner20180313
草莓 英文专利内容由知识产权出版社提供
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专利附图：
摘要：Methods of forming a diffusion break are disclod. The method includes
forming a diffusion break after source/drain formation, by removing a gate stack of the dummy gate to a buried insulator of an SOI substrate, creating a first opening; and filling
the first opening with a dielectric to form the diffusion break. An IC structure includes the diffusion break in contact with an upper surface of the buried insulator. In an optional embodiment, the method may also include simultaneously forming an isolation in an active gate to an STI in the SOI substrate.
自动挡车怎么开申请人：GLOBALFOUNDRIES INC.
地址：Grand Cayman KY
amount国籍：KY
int代理机构：Hoffman Warnick LLCexpendables
代理人：Yuanmin Cai
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